3.3 kV SiC/Si混合型三电平拓扑应用研究  

Research on Application of 3.3 kV SiC/Si Hybrid Three-level Topology

作　　者：张逸淳 刘海涛 王嘉义 傅航杰 ZHANG Yi-chun;LIU Hai-tao;WANG Jia-yi;FU Hang-jie(CRRC Zhuzhou Institude Co.,Ltd.,Zhuzhou 412000,China)

机构地区：[1]中车株洲电力机车研究所有限公司,湖南株洲412000

出　　处：《电力电子技术》2025年第1期121-124,共4页Power Electronics

基　　金：中国国家铁路集团有限公司科技研究开发计划(P2023J004)。

摘　　要：本文主要探讨了大功率三电平应用中3.3 kV SiC MOSFET和IGBT的混合应用问题,针对外管高频、内管低频的调制策略中不同箝位管脉冲时序对三电平有源中点箝位(ANPC)拓扑换流路径、开关损耗以及开关特性等关键因素的影响开展分析,实验验证了不同箝位管脉冲时序对SiC MOSFET和IGBT的动态特性和开关损耗的影响。The issue of hybrid application of 3.3 kV SiC MOSFET and IGBT in the high-power three-level topology application is primarily investigated.In the modulation strategy that the outer switches at high frequency and inner switches at line frequency,the impact of different clamped switch pulse sequences on key factors such as commutation paths,switching losses and switching characteristic within the three-level active neutral point clamped(ANPC)topology is analyzd.The influence of different clamped switch pulse sequences on switching dynamic characteristic and switch-ing losses of SiC MOSFET and IGBT is verified by the experiment results.

关 键 词：箝位管 有源中点箝位 脉冲时序 

分 类 号：TN3[电子电信—物理电子学]