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作 者:BIWEI PAN JEROME BOURDERIONNET VINCENT BILLAULT GUENOLE DANDE MARCUS DAHLEM JEONG HWAN SONG SARVAGYA DWIVEDI DIEGO CARBAJAL ALTAMIRANO CIAN CUMMINS SANDEEP SEEMA SASEENDRAN PHILIPPE HELIN JOAN RAMIREZ DELPHINE NÉEL EMADREZA SOLTANIAN JING ZHANG GUNTHER ROELKENS
机构地区:[1]Photonics Research Group,Department of Information Technology(INTEC),Ghent University-IMEC,Ghent 9052,Belgium [2]Thales Research and Technology,Palaiseau 91767,France [3]IMEC,Heverlee 3001,Belgium [4]III-V Lab,Palaiseau 91767,France
出 处:《Photonics Research》2024年第11期2508-2520,共13页光子学研究(英文版)
基 金:Horizon 2020 Framework Programme(101017088(INSPIRE),8225453(CALADAN),871345(MEDPHAB))。
摘 要:Leveraging its superior waveguide properties,silicon-nitride(Si_(3)N_(4))photonics is emerging to expand the applications of photonic integrated circuits to optical systems where bulk optics and fibers today still dominate.In order to fully leverage its advantages,heterogeneous integration ofⅢ-Ⅴgain elements on Si_(3)N_(4)is one of the most critical steps.In this paper,we demonstrate aⅢ-Ⅴ-on-Si_(3)N_(4)widely tunable narrow-linewidth laser based on micro-transfer printing.Detailed design considerations of the tolerantⅢ-Ⅴ-to-Si_(3)N_(4)vertical coupler,Si_(3)N_(4)-based micro-ring resonators(MRRs),and micro-heaters are discussed.By introducing the dispersion of Si_(3)N_(4)waveguide in the design,the proposed Vernier MRRs enable an extended tuning range over multiple Vernier periods.The laser shows a wavelength tuning range of 54 nm in C and L bands with intrinsic linewidth less than 25 kHz.Within the tuning range,the side mode suppression ratio is larger than 40 dB and the output power in the Si_(3)N_(4)waveguide reaches 6.3 mW.The integration process allows for the fabrication and quality control of both the Si_(3)N_(4)circuits andⅢ-Ⅴdevices in its own foundry,which greatly enhances the integration yield and paves the way for large-scale integration.
关 键 词:WAVEGUIDE tuning TUNABLE
分 类 号:TN2[电子电信—物理电子学]
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