基于180 nm CMOS工艺的281 GHz太赫兹探测器  

A 281 GHz terahertz detector in 180 nm CMOS process

作　　者：姜宁 郭莹[1] 刘朝阳[2,3,4] 祁峰[2,3,4] JIANG Ning;GUO Ying;LIU Zhaoyang;QI Feng(College of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China;Key Laboratory of Opto-Electronic Information Processing,Chinese Academy of Sciences,Shenyang 110169,China;Shenyang Institute of Automation,Chinese Academy of Sciences,Shenyang 110169,China;Key Laboratory of Terahertz Imaging and Sensing,Liaoning Province,Shenyang 110169,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110870 [2]中国科学院光电信息处理重点实验室,辽宁沈阳110169 [3]中国科学院沈阳自动化研究所,辽宁沈阳110169 [4]辽宁省太赫兹成像感知重点实验室,辽宁沈阳110169

出　　处：《红外与激光工程》2025年第1期247-255,共9页Infrared and Laser Engineering

基　　金：国家重点研发计划项目(2023YFF0718303);雄安新区科技创新专项(2022XAGG0181);国家自然科学基金项目(6180416,61801467)。

摘　　要：基于180 nm标准CMOS工艺设计出了一种281 GHz太赫兹(THz)探测器。该探测器集成了贴片天线和NMOS场效应晶体管。为了提升天线和晶体管之间的太赫兹功率传输效率,在其之间设计了阻抗匹配网络。仿真结果显示,添加阻抗匹配网络后,探测器的性能提升了约20倍。为了消除栅极偏置线和芯片键合线对天线和晶体管之间阻抗匹配的影响,在晶体管栅极处设计了陷波滤波器。由于采用了辐射方向向上的贴片天线,无需集成硅透镜来补偿硅衬底导致的表面波损耗,降低了探测器的复杂性与成本。测试结果显示,在281 GHz频率下,探测器的电压响应率(Rv)和噪声等效功率(Noise Equivalent Power,NEP)分别为1524 V/W和19.9 pW/Hz1/2。利用该探测器搭建了太赫兹扫描成像系统,成像结果清晰地显示了门禁卡等物体内部线圈和芯片的位置。Objective The terahertz(THz)frequency range(0.3–3 THz),has garnered extensive attention in recent years.THz detectors are fundamental components in terahertz wave technology research.By virtue of its advantages of low cost,high yield,and easy integration,CMOS technology is emerging as an alternative to other technologies.To address the performance degradation of the terahertz detector due to low radiation efficiency,a patch antenna with upward radiation is employed,characterizing its various performance attributes.Methods The architecture of the proposed THz detector is shown in Fig.1.The detector consists of an on-chip patch antenna and a source-feeding NMOS transistor.To enhance the efficiency of terahertz power transmission between the antenna and the transistor,an impedance matching network is integrated.This network consists of a single microstrip transmission line with a length of 105μm.Additionally,a notch filter is designed at the transistor gate to minimize the impact of the gate bias line and chip bonding wires on impedance matching.The notch filter is implemented as an open-circuited microstrip transmission line with a length of 124μm and a width of 1μm,fabricated from the top metal layer,while the bottom metal layer serves as the ground plane.Results and Discussions Simulation results indicate that incorporating an impedance matching network enhances the detector's performance by approximately 20 times compared to the configuration without the impedance matching network.The detector is fabricated in the 180 nm CMOS process,with an area of 460μm×497μm.Measurement results,as shown in Fig.10,demonstrate that the detector operates over a frequency range of 220-325 GHz,with a maximum responsivity(Rv)of 1524 V/W at 281 GHz and a minimum noise equivalent power(NEP)of 19.9 pW/Hz1/2 when Vg=0.48 V.Table 1 presents a performance comparison between the detector designed in this work and other previously reported detectors.Compared to detectors that require integrated silicon lenses,the patch antenna in t

关 键 词：CMOS探测器 贴片天线 阻抗匹配网络 陷波滤波器 太赫兹成像 

分 类 号：TN215[电子电信—物理电子学]