基于InP/InGaAs肖特基二极管的高灵敏太赫兹探测器  

High sensitivity terahertz detectors based on the InP/InGaAs Schottky Barrier Diodes

作　　者：周静涛[1] 金智[1] 苏永波[1] 史敬元[1] 丁武昌[1] 张大勇[1] 杨枫 刘桐 ZHOU Jingtao;JIN Zhi;SU Yongbo;SHI Jingyuan;DING Wuchang;ZHANG Dayong;YANG Feng;LIU Tong(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《太赫兹科学与电子信息学报》2025年第1期40-43,共4页Journal of Terahertz Science and Electronic Information Technology

摘　　要：InP/InGaAs肖特基二极管(SBDs)探测器因其高电子迁移率和低势垒材料特性,具有非常高的电压响应灵敏度,广泛用于高灵敏太赫兹波探测技术中。为进一步降低器件寄生效应,提升其高频性能,本文提出一种无衬底单台面T型结新型结构的肖特基器件,器件的截止频率为9.5THz。基于新型结构的InP/InGaAs肖特基器件技术,研制了220~330GHz、30~500GHz、400~600 GHz和500~750 GHz等多频段的太赫兹探测器模块。其中220~330 GHz频段太赫兹检测器模块与美国VDI公司的同频段检测器模块相比,检测灵敏度等指标相近。该器件在太赫兹安检成像应用中具有很好的应用前景。InP/InGaAs Schottky Barrier Diodes(SBDs)detectors,due to their high electron mobility and low barrier material characteristics,have a very high voltage response sensitivity and are widely used in highly sensitive terahertz wave detection technology.To further reduce device parasitic effects and enhance its high-frequency performance,a novel structure of substrate-free single-mesa T-junction Schottky device is proposed,with a cutoff frequency of 9.5 THz.Based on the novel structure of InP/InGaAs Schottky device technology,terahertz detector modules for multiple frequency bands such as 220~330 GHz,30~500 GHz,400~600 GHz,and 500~750 GHz have been developed.Compared with the detectors of the same frequency band from VDI Company in the United States,the detection sensitivity and other indicators are similar,indicating that the device has a promising application prospect in terahertz security imaging.

关 键 词：太赫兹检测器 肖特基二极管(SBDs) T型结 无衬底单台面 

分 类 号：TN717[电子电信—电路与系统]