雾化热解喷涂法制备钽掺杂锐钛矿TiO_(2)(001)薄膜  

Ta-Doped Anatase TiO_(2)(001)Films Prepared by Atomization Pyrolysis Spraying Method

作　　者：吴非凡 李冬梅 向星承 赵丹 周俊 龚恒翔 肖黎[1,2] Wu Feifan;Li Dongmei;Xiang Xingcheng;Zhao Dan;Zhou Jun;Gong Hengxiang;Xiao Li(College of Science,Chongqing University of Technology,Chongqing 400054,China;Institute of Photovoltaic New Energy Application Technology and Equipment,Chongqing University of Technology,Chongqing 400054,China;Longtai Yangjian(Chongqing)Medical Technology Co.,Ltd.,Chongqing 400054,China)

机构地区：[1]重庆理工大学理学院,重庆400054 [2]重庆理工大学光伏新能源应用技术与设备研究所,重庆400054 [3]龙泰洋健(重庆)医疗科技有限公司,重庆400054

出　　处：《微纳电子技术》2025年第2期89-96,共8页Micronanoelectronic Technology

基　　金：重庆市教育委员会科学技术研究基金(KJQN202201137)。

摘　　要：通过雾化热解喷涂法成功在铝酸镧单晶衬底上制备出具有良好导电性的锐钛矿TiO_(2)(004)薄膜,并在此基础上进行Ta掺杂对TiO_(2)薄膜结构、性能的影响研究。研究结果表明:Ta元素掺杂对TiO_(2)薄膜(004)晶面结晶度提高有促进作用,在Ta掺杂原子数分数为7.58%时,表现出最佳的结晶度(半峰宽0.26°);Ta元素掺杂降低了薄膜在可见光区域的透过率,整体上使TiO_(2)(004)薄膜光学带隙增大,但是随着Ta元素的增加,光学带隙有轻微下降趋势;Ta元素掺杂是提高TiO_(2)薄膜电学性质的有效手段,随着Ta掺杂原子数分数的提升,TiO_(2)薄膜最大载流子浓度可达1.92×10^(18) cm^(-3),霍尔迁移率从低掺杂原子数分数时的8.27 cm^(-2)·V^(-1)·s^(-1)提高到1.06×10^(2) cm^(-2)·V^(-1)·s^(-1),最低电阻率达到1.30×10^(-2)Ω·cm。本研究表明雾化热解喷涂法是一种低成本制备高结晶度TiO_(2)薄膜的可靠方法,且相关结果为取向性TiO_(2)薄膜的生长、结晶、光学及电学性质调控提供了一定参考。Anatase TiO_(2)(004)films with good conductivity were successfully prepared on lanthanum aluminate single crystal substrates by atomization pyrolysis spraying method.On this basis,the effects of Ta doping on the structure and properties of TiO_(2) films were studied.The results show that Ta doping can promote the improvement of the crystalline degree of TiO_(2) films(004),and the best crystallinity(full width at half maximum of 0.26°)is shown when the atomic number fraction of Ta doping is 7.58%.Ta doping reduces the transmittance of the film in the visible region.Overall,the optical band gap of the TiO_(2)(004)films increases,but the optical band gap decreases slightly with the increase of Ta.Ta doping is an effective means to improve the electrical properties of TiO_(2) thin film.With the increase of Ta doping atomic number fraction,the maximum carrier concentration of TiO_(2) films can reach 1.92×1018 cm^(-3),the Hall mobility increases from 8.27 cm^(-2)·V^(-1)·s^(-1) at low doping atomic number fraction to 1.06×10^(2) cm^(-2)·V^(-1)·s^(-1),and the minimum resistivity reaches 1.30×10^(-2)Ω·cm.This study shows that atomization pyrolysis spraying method is a reliable method for preparing high-crystallinity TiO_(2) films at low cost,and the relevant results can provide a certain reference for the growth,crystallization,optical and electrical properties of oriented TiO_(2) films.

关 键 词：雾化热解喷涂法 TiO_(2)薄膜 Ta掺杂 取向性生长 可见光透过性 电学性能 

分 类 号：TB34[一般工业技术—材料科学与工程]