Growth modes ofβ-Ga_(2)O_(3)on h-BN:Remote epitaxy and van der Waals epitaxy  

作　　者：Yiming Shi Junhua Meng Zhengchang Xia Jidong Huang Wenkang Liu Ji Jiang Zhigang Yin Jinxiang Deng Xingwang Zhang 

机构地区：[1]School of Physics and Optoelectronic Engineering,Beijing University of Technology,Beijing 100124,China [2]Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [3]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Nano Research》2025年第2期887-895,共9页纳米研究(英文版)

基　　金：This work was financially supported by the National Natural Science Foundation of China(Nos.62174009 and 62274151).

摘　　要：Integrating monoclinic gallium oxide(β-Ga_(2)O_(3))with two-dimensional(2D)hexagonal boron nitride(h-BN)into heterostructures is of significant importance for achieving high-power device applications.The 2D-material-assisted epitaxy provides a straightforward integration method for fabricatingβ-Ga_(2)Og/h-BN vertical heterostructures.In this work,theβ-Ga_(2)O_(3)films were deposited on both polycrystalline and single-crystalline h-BN layers with different thicknesses,and two growth modes ofβ-Ga_(2)O_(3)films on h-BN,remote epitaxy,and van der Waals(vdW)epitaxy,were investigated.The results show that the potential of the sapphire substrate can penetrate the monolayer and bilayer h-BN to obtain the remote epitaxy ofβ-Ga_(2)O_(3)films,regardless of the crystallinity of h-BN.The vdW epitaxy ofβ-Ga_(2)O_(3)film can be realized on the monocrystalline h-BN substrate.Compared with the conventional and remote epitaxialβ-Ga_(2)O_(3)films on sapphire substrate,the vdW epitaxialβ-Ga_(2)O_(3)films on the single-crystalline h-BN substrate exhibit higher crystallinity.This work indicates that the 2D-material-assisted epitaxy provides a feasible scheme for the heterogeneous integration ofβ-Ga_(2)O_(3)films.

关 键 词：β-Ga_(2)O_(3) H-BN remote epitaxy van der Waals epitaxy HETEROSTRUCTURES 

分 类 号：TB383[一般工业技术—材料科学与工程]