Synthesis of wafer-scale monolayer MoS_(2) on sapphire: Unlocking the influence of key growth parameters  

作　　者：Rong Song Dingyi Shen Dongyan Liu Jingyi Liang Zimei Zhang Jingmei Tang Liang Chen Bo Li Jia Li Xidong Duan 

机构地区：[1]Hunan Key Laboratory of Two-Dimensional Materials,State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Chongqing Research Institute,Hunan University,Changsha 410082,China [2]Hubei Key Laboratory of Energy Storage and Power Battery,School of Mathematics,Physics and Optoelectronic Engineering,Hubei University of Automotive Technology,Shiyan 442002,China [3]College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China

出　　处：《Nano Research》2025年第2期930-939,共10页纳米研究(英文版)

基　　金：This work was granted by the National Key Research and Development Program of the of China(No.2022YFA1203801);the National Natural Science Foundation of China(Nos.51991340,51991343,52221001,52102168,and 52372145);Hunan Key Research and Development Program Project(No.2022GK2005);the Natural Science Foundation of Hunan Province(No.2023JJ20009);the Hunan Province“Huxiang Talents”Project(No.2023RC3092);the Natural Science Foundation of Chongqing,China(No.cstc2021jcyj-msxmX0321);the Doctoral Scientific Research Foundation of Hubei University of Automotive Technology(No.BK202486).

摘　　要：Large-scale synthesis of high-quality two dimensional(2D)semiconductors,such as molybdenum disulfide(MoS_(2)),is a prerequisite for their lab-to-fab transition.It is crucial to systematically explore and understand the influence of key synthetic conditions on the nucleation,uniformity,and quality of MoS_(2) wafers.Here,we report the epitaxial growth of high-quality and uniform monolayer MoS_(2) films on 2-in c-plane sapphire by chemical vapor deposition(CVD)method under optimized growth conditions(0–1 mg NaCl,adequate S/Mo ratio,and the addition of 0–1 sccm O2).We systematically explore the influence of critical synthetic conditions on the nucleation,and stitching of MoS_(2) domains over the wafer scale,including the dosage of the alkali metal salt NaCl additive,the evaporation temperature of MoO_(3),the distance between MoO_(3) and the substrate,and the flow rate of O_(2).Among them,the dosage of NaCl and the S/Mo ratio have important influences on the quality and film coverage of MoS_(2),while the flow rate of O_(2) plays a key role in controlling the nucleation density and domain size.We further discovered that a-plane sapphire could easily guide the unidirectional growth of MoS_(2) without the need for other specific synthetic conditions compared with c-plane and m-plane sapphire.The field-effect transistors(FETs)fabricated from the full-coverage films show an average and the highest mobilities of 28.5 and around 45 cm^(2)·V−1·s^(-1),respectively.

关 键 词：wafer-scale MoS_(2)films chemical vapor deposition critical synthetic conditions MONOLAYER field-effect transistors 

分 类 号：TN3[电子电信—物理电子学]