Two-dimensional lateral magnetic tunnel junction with ultrahigh tunneling magnetoresistance  

作　　者：Qiu-Qiu Li Zhi-Fu Duan Wen-Wen Liu Rong Yang Bo Li Ke-Qiu Chen 

机构地区：[1]Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China [2]Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China [3]Research Institute of Hunan University in Chongqing,Chongqing 401120,China [4]Shenzhen Research Institute of Hunan University,Shenzhen 518063,China

出　　处：《Nano Research》2025年第2期958-964,共7页纳米研究(英文版)

基　　金：This work was supported by the National Natural Science Foundation of China(Nos.62322406,62174051,and 62122084);the National Key Research and Development Program of the Ministry of Science and Technology(Nos.2024YFA1208401 and 2022YFB4400100);the Natural Science Foundation of Hunan Province(No.2024JJ6115);the Shenzhen Basic Research Project(No.JCYJ20210324142012035);Natural Science Foundation of Chongqing,China(No.cstc2021jcyj-msxmX0126)。

摘　　要：Giant tunneling magnetoresistance(TMR)has always been a pursuit in the research of magnetic tunnel junctions(MTJ).Two-dimensional(2D)magnetic materials have been used to construct lateral MTJ with high TMR.Here we investigated the crystal structure and magnetic property of CrSI monolayer,and found that it is a ferromagnetic semiconductor with a Curie temperature of about 180 K.The CrSI monolayer with Li adsorption(Li-CrSI)show ferromagnetic half-metallic with a high Curie temperature of 300 K.Further we designed a lateral Li CrSI/CrSI/Li-CrSI monolayer MTJ.The TMR of the MTJs along b transport direction is 3 orders of magnitude times larger than that of the a transport direction,which should result from the different spin filtering ability along the two directions.The TMR of b transport direction in the MTJ is 7.67×10^(14),which is significantly higher than that of any reported lateral MTJs based on 2D materials.Our results provide a promising avenue for designing lateral MTJs with giant TMR and high Curie temperature.

关 键 词：two-dimensional materials magnetic tunnel junctions CrSI monolayer tunneling magnetoresistance Li atom adsorption 

分 类 号：TN409[电子电信—微电子学与固体电子学]