Phonon-limited mobility for electrons and holes in highly-strained silicon  

作　　者：Nicolas Roisin Guillaume Brunin Gian-Marco Rignanese Denis Flandre Jean-Pierre Raskin Samuel Poncé 

机构地区：[1]Institute of Information and Communication Technologies,Electronics and Applied Mathematics,Universitécatholique de Louvain,Louvain-la-Neuve,Belgium [2]European Theoretical Spectroscopy Facility,Institute of Condensed Matter and Nanosciences,Universitécatholique de Louvain,Louvain-la-Neuve,Belgium [3]Matgenix,A6K Advanced Engineering Center,Charleroi,Belgium [4]WEL Research Institute,Wavre,Belgium

出　　处：《npj Computational Materials》2024年第1期673-683,共11页计算材料学(英文)

基　　金：S.P.and G.-M.R.acknowledge support fromthe Fonds de la Recherche Scientifique de Belgique(FRS-FNRS);Computational resources have been provided by the supercomputing facilities of the Universitécatholique de Louvain(CISM/UCL)and the Consortium desÉquipements de Calcul Intensif en Fédération Wallonie Bruxelles(CÉCI)funded by the Fond de la Recherche Scientifique de Belgique(F.R.S.-FNRS)under convention 2.5020.11 and by the Walloon Region;The present research benefited from computational resources made available on Lucia,the Tier-1 supercomputer of the Walloon Region,infrastructure funded by the Walloon Region under the grant agreement n°1910247.

摘　　要：Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors,but its effect is not fully understood.In this work,we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2%in the[100]crystal direction.

关 键 词：MOBILITY STRAINED ELECTRONS 

分 类 号：TN3[电子电信—物理电子学]