High temperature ferrimagnetic semiconductors by spin-dependent doping in high temperature antiferromagnets  

作　　者：Jia-Wen Li Gang Su Bo Gu 

机构地区：[1]Kavli Institute for Theoretical Sciences,University of Chinese Academy of Sciences,Beijng,China [2]CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijng,China [3]Physical Science Laboratory,Huairou National Comprehensive Science Center,Beijing,China [4]School of Physical Sciences,University of Chinese Academy of Sciences,Beijng,China

出　　处：《npj Computational Materials》2024年第1期1116-1125,共10页计算材料学(英文)

基　　金：supported by the National Key R&D Program of China(Grant No.2022YFA1405100);National Natural Science Foundation of China(Grant No.12074378);Chinese Academy of Sciences(Grants No.YSBR-030,No.JZHKYPT-2021-08,No.XDB33000000).

摘　　要：To realize room temperature ferromagnetic(FM)semiconductors is still a challenge in spintronics.Many antiferromagnetic(AFM)insulators and semiconductors with high Neel temperature TN are obtained in experiments,such as LaFeO_(3),BiFeO_(3),etc.High concentrations of magnetic impurities can be doped into these AFM materials,but AFM state with very tiny net magnetic moments was obtained in experiments because the magnetic impurities were equally doped into the spin up and down sublattices of the AFM materials.Here,we propose that the effective magnetic field provided by a FM substrate could guarantee the spin-dependent doping in AFM materials,where the doped magnetic impurities prefer one sublattice of spins,and the ferrimagnetic(FIM)materials are obtained.To demonstrate this proposal,we study the Mn-doped AFM insulator LaFeO_(3)with FM substrate of Fe metal by the density functional theory(DFT)calculations.

关 键 词：materials MAGNETIC high 

分 类 号：TB3[一般工业技术—材料科学与工程]