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作 者:Meng Liu Shuyi He Hongyan Ji Jingda Guo Zhaotan Jiang Jia-Tao Sun Hong-Jun Gao
机构地区:[1]School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing,China [2]School of Physics,Beijing Institute of Technology,Beijing,China [3]Beijing National Center for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing,China
出 处:《npj Computational Materials》2024年第1期1367-1376,共10页计算材料学(英文)
基 金:supported by the National Natural Science Foundation of China(Grant Nos.12374172,11974045,61888102);the National Key Research and Development Program of China(Grants No.2020YFA0308800);“Strategic Priority Research Program(B)”of the Chinese Academy of Sciences(Grant No.XDB30000000).
摘 要:Two-dimensional materials possessing intrinsic multiferroic properties have long been sought to harness the magnetoelectric coupling in nanoelectronic devices.Here,we report the achievement of robust type I multiferroic order in single-layer chromium trihalides by decorating transition metal atoms.The out-of-plane ferroelectric polarization exhibits strong atomic selectivity,where 12 of 84 single-layer transition metal-based multiferroic materials possess out-of-plane ferroelectric or antiferroelectric polarization.
关 键 词:FERROELECTRIC CHROMIUM transition
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