Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding  

作　　者：Kehan Liu Xikui Ma Yangyang Li Mingwen Zhao 

机构地区：[1]School of Physics,Shandong University,Jinan 250100,China

出　　处：《npj Computational Materials》2024年第1期2025-2031,共7页计算材料学(英文)

基　　金：supported by the National Natural Science Foundation of China(no.12074218);the Taishan Scholar Program of Shandong Province.

摘　　要：Layer Hall effect(LHE),initially discovered in the magnetic topological insulator MnBi2Te4 film,expands the Hall effect family and opens a promising avenue for layertronics applications.In this study,we present an innovative ferroelectric bilayer model to attain a tunable quantum anomalous layer Hall effect(QALHE).This model comprises two ferromagnetic orbital-active Dirac monolayers stacked antiferromagnetically,accompanied by out-of-plane electric polarization.The interplay between the layer-locked Berry curvature monopoles and the intrinsic out-of-plane electric polarization leads to layer-polarized near-quantized anomalous Hall conductance.Using firstprinciples calculations,we have identified a promising material for this model,namely FeS bilayer.Our calculations demonstrate that the intrinsic out-of-plane electric polarization in theBernal-stacked FeS bilayer can induce QALHE by regulating the layer-locked Berry curvature of FeS monolayers.Importantly,the intrinsic electric field can be reversed through interlayer sliding.The discovery of ferroelectrically modulated QALHE paves the way for the integrability and non-volatility of layertronics,offering exciting prospects for future applications.

关 键 词：LAYER QUANTUM curvature 

分 类 号：O48[理学—固体物理]