Strain engineering the spin-valley coupling of the R-stacking sliding ferroelectric bilayer 2H-VX_(2)(X=S,Se,Te)  

作　　者：Jiayu Ma Xin Luo Yue Zheng 

机构地区：[1]Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,School of Physics,Sun Yat-sen University,Guangzhou 510275,China [2]State Key Laboratory of Optoelectronic Materials and Technologies,School of Physics,Sun Yat-sen University,510275 Guangzhou,China [3]Centre for Physical Mechanics and Biophysics,Sun Yat-Sen University,Guangzhou 510275,China

出　　处：《npj Computational Materials》2024年第1期2198-2205,共8页计算材料学(英文)

基　　金：support by the Grants from National Natural Science Foundation of China(Nos.12172386,12132020);the National Natural Science Foundation of Guangdong Province,China(No.2021B1515020021);the Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(No.2022B1212010008).

摘　　要：The emergence of magnetic transition metal dichalcogenides has significantly advanced the development of valleytronics due to the spontaneous breaking of time-reversal symmetry and spaceinversion symmetry.However,the lack of regulation methods has prevented researchers from exploring their potential applications.Herein,we propose to use strain engineering to control the spinvalley coupling in the sliding ferroelectric bilayer 2H-VX_(2)(X=S,Se,Te).

关 键 词：FERROELECTRIC COUPLING stacking 

分 类 号：O48[理学—固体物理]