智能功率模块的高温反偏试验失效分析与研究  

Failure Analysis and Research on HTRB Test of Intelligent Power Module

作　　者：覃华荣 李国强 QIN Huarong;Li Guoqiang(GREE Electric Appliances,Inc.of Zhuhai,Zhuhai 519000,China;Zhuhai GREE Xinyuan Electronic Co.,Ltd.,Zhuhai 519000,China)

机构地区：[1]珠海格力电器股份有限公司,广东珠海519000 [2]珠海格力新元电子有限公司,广东珠海519000

出　　处：《传感器世界》2024年第12期13-17,共5页Sensor World

摘　　要：高温反偏(HTRB)试验是智能功率模块(IPM)的一种老化技术,对某型号IPM在高温反偏试验中出现短路失效的实际问题进行分析,得出失效原因是由于高温驱入工序设备异常导致炉管内气体氛围异常,P及N型杂质扩散到炉管并附着穿过芯片表面氧化层自掺杂在芯片中,影响了结的横向扩散效果,导致HTRB试验时内部快恢复二极管(FRD)漏电流增大热失效。以此提出改进方法:试验温度由125℃提高至145℃(Tstgmax-5℃),通过提高热应力来接近芯片极限结温暴露缺陷;在高温驱入前增加氧化层厚度,增强阻挡杂质离子侵入能力。该失效分析案例对保障IPM可靠性和失效分析技术具有应用研究价值与意义。High temperature reverse bias(HTRB)test is an aging technology of intelligent power module(IPM).The actual problem of short circuit failure in high temperature reverse bias test of a certain type of IPM is analyzed,and the failure reasons are as follows:Due to the abnormal gas atmosphere in the furnace tube caused by the abnormal equipment in the high temperature flooding process,P and N type impurities diffused into the furnace tube and self-doped in the chip through the oxide layer on the chip surface,affecting the lateral diffusion effect of the plug,resulting in increased FRD leakage current and thermal failure during HTRB test.The improvement methods are as follows:The test temperature is increased from 125℃ to 145℃(Tstgmax-5℃),and the defects exposed by the ultimate junction temperature of the chip are approached by increasing the thermal stress;Increase the thickness of the oxide layer before high temperature flooding to enhance the ability to block the intrusion of impurity ions.The failure analysis case has the application research value and significance to guarantee the reliability of IPM and the failure analysis technology.

关 键 词：智能功率模块 HTRB试验 失效分析 

分 类 号：TM925.12[电气工程—电力电子与电力传动]