Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias  

作　　者：Pei-Pei Hu Li-Jun Xu Sheng-Xia Zhang Peng-Fei Zhai Ling Lv Xiao-Yu Yan Zong-Zhen Li Yan-Rong Cao Xue-Feng Zheng Jian Zeng Yuan He Jie Liu 

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences(CAS),Lanzhou 730000,China [2]Key Laboratory of Wide Band‑gap Semiconductor Materials,Ministry of Education,Xidian University,Xi’an 710071,China [3]University of Chinese Academy of Sciences(UCAS),Beijing 100049,China

出　　处：《Nuclear Science and Techniques》2025年第1期49-58,共10页核技术(英文)

基　　金：supported by the National Natural Science Foundation of China(Nos.12035019,62234013,12205350,12075290,12175287);the China National Postdoctoral Program for Innovative Talents(BX20200340);the fund of Innovation Center of Radiation Application(No.KFZC2022020601);the Chinese Academy of Sciences(CAS)“Light of West China"Program hosted by Jian Zeng.

摘　　要：Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.

关 键 词：GaN HEMTs Heavy ions Single-event burnout Latent tracks Degradation 

分 类 号：TN386[电子电信—物理电子学]