Dramatic switchable polarities in conduction type and self-driven photocurrent of BiI_(3) via pressure engineering  

作　　者：Lei Yue Fuyu Tian Ran Liu Zonglun Li Ruixin Li Chenyi Li Yanchun Li Dongliang Yang Xiaodong Li Quanjun Li Lijun Zhang Bingbing Liu 

机构地区：[1]State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China [2]Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering,Jilin University,Changchun 130012,China [3]Beijing Synchrotron Radiation Facility,Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China

出　　处：《National Science Review》2025年第1期237-246,共10页国家科学评论(英文版)

基　　金：supported by the National Key R&D Program of China(2023YFA1406200);the National Natural Science Foundation of China(12274166 and 62321166653).

摘　　要：The intentional manipulation of carrier characteristics serves as a fundamental principle underlying various energy-related and optoelectronic semiconductor technologies.However,achieving switchable and reversible control of the polarity within a single material to design optimized devices remains a significant challenge.Herein,we successfully achieved dramatic reversible p-n switching during the semiconductor-semiconductor phase transition in BiI_(3) via pressure,accompanied by a substantial improvement in their photoelectric properties.Carrier polarity flipping was monitored by measuring the photocurrent dominated by the photothermoelectric(PTE)effect in a zero-bias two-terminal device.Accompanying the p-n transition,a switch between positive and negative photocurrents was observed in BiI_(3),providing a feasible method to determine the conduction type of materials via photoelectric measurements.Furthermore,the combined effects of the photoconductivity and PTE mechanism improved the photoresponse and extended the detection bandwidth to encompass the optical communication waveband(1650 nm)under an external bias.The remarkable photoelectric properties were attributed to the enhanced energy band dispersion and increased charge density of BiI_(3) under pressure.These findings highlight the effective and flexible modulation of carrier properties through pressure engineering and provide a foundation for designing and implementing multifunctional logic circuits and optoelectronic devices.

关 键 词：high pressure conduction-type switching self-driven photocurrent metal halide 

分 类 号：TB34[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]