Scalable InGaN nanowireμ-LEDs:paving the way for next-generation display technology  

作　　者：Vignesh Veeramuthu Sung-Un Kim Sang-Wook Lee R.Navamathavan Bagavath Chandran Dae-Young Um Jeong-Kyun Oh Min-Seok Lee Yong-Ho Kim Cheul-Ro Lee Yong-Ho Ra 

机构地区：[1]Division of Advanced Materials Engineering,College of Engineering,Research Center for Advanced Materials Development(RCAMD),Jeonbuk National University(JBNU),Jeonju 54896,South Korea [2]Division of Physics,School of Advanced Sciences,VIT University Chennai Campus,Chennai 600127,India

出　　处：《National Science Review》2025年第1期297-316,共20页国家科学评论(英文版)

基　　金：supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(RS202400358275 and RS202400354960);in part by the Korea Institute of Ceramic Engineering&Technology under Grant(1415181794);by research funds for newly appointed professors of Jeonbuk National University in 2021.

摘　　要：Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays,from micro-electronic displays to large video walls.InGaN nanowires,with features like high electron mobility,tunable emission wavelengths,durability under high current densities,compact size,self-emission,long lifespan,low-power consumption,fast response,and impressive brightness,are emerging as the choice of micro-light emitting diodes(μLEDs).However,challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.Consequently,research is increasingly focused on scalable InGaN nanowireμLEDs representing a transformative advancement in display technology,particularly for next-generation applications such as virtual/augmented reality and high-speed optical interconnects.This study presents recent progress and critical challenges in the development of InGaN nanowireμLEDs,highlighting their performance and potential as the next-generation displays in consumer electronics.

关 键 词：GaN multi-quantum well NANOWIRE micro LED display AR/VR/MR 

分 类 号：TN3[电子电信—物理电子学]