La_(2)(ZrO_(3))_(3)掺杂BST基介电陶瓷介电性能的研究  

Study on the Dielectric Properties of La_(2)(ZrO_(3))_(3)Doped BST Based Dielectric Ceramics

作　　者：陈映义 陈磊[2] 彭道华 陈甲天 陈应和 黄新友[2] 牛继恩 CHEN Yingyi;CHEN Lei;PENG Daohua;CHEN Jiatian;CHEN Yinghe;HUANG Xinyou;NIU Jien(Fujian Ruisheng Electronic Technology Co.,Ltd.,Zhangzhou 363500,China;School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,China)

机构地区：[1]福建瑞升电子科技有限公司,漳州363500 [2]江苏大学材料科学与工程学院,镇江212013

出　　处：《中国陶瓷》2025年第2期33-38,45,共7页China Ceramics

基　　金：广东省教育部产学研结合资助项目(2011B090400027)。

摘　　要：通过传统固相法制备La_(2)(ZrO_(3))_(3)掺杂(Ba_(0.79)Sr_(0.21))TiO_(3)(BST)陶瓷。采用XRD、SEM等研究了掺杂La_(2)(ZrO_(3))_(3)(LZO)对BST基陶瓷的物相和微观结构及介电性能影响。结果表明:随着LZO掺杂量增加,BST基介电陶瓷介电常数首先降低而后增加再又降低,介质损耗首先减小而后增大又再减小,BST基介电陶瓷的电阻率首先增大然后减小而后又再增大,耐压的强度首先增大然后减小。当LZO掺杂量为0.5 wt%时,BST基介电陶瓷具有最大介电常数,为6138;当LZO掺杂量为4.0 wt%的时候,BST基介电陶瓷的介质损耗最小,为0.0058,介电陶瓷的电阻率最大,为3609 GΩ·cm;当LZO掺杂量为3 wt%时,BST基介电陶瓷的耐压强度最大,为E_(b)=7.8 KV/mm(DC),容温变化率是+33.67%,-47.38%。掺杂LZO的BST基介电陶瓷是钙钛矿结构。随着掺杂量的增加,BST基介电陶瓷的介电弛豫现象比较明显,移峰效应也比较显著,衍射角首先增大然后减小,晶粒尺寸先减小然后增大。La_(2)(ZrO_(3))_(3)doped(Ba_(0.71)Sr_(0.29))TiO_(3)(BST)ceramics were prepared by the traditional solid-state method.The influence of doping La_(2)(ZrO_(3))_(3)(LZO)on the phase composition,microstructure,and dielectric properties of BST based ceramics was investigated by X-ray diffraction(XRD)and scanning electron microscopy(SEM)etc.The results indicate that as the amount of LZO doping increases,the dielectric constant of the BST based dielectric ceramics first decreases,then increases,and finally decreases again.The dielectric loss firstly decreases,then increases,and decreases again.The resistivity of the BST based dielectric ceramics firstly increases,then decreases,and increases again.The withstand voltage strength(Eb)increases firstly and then decreases.When the doping amount of LZO is 0.5 wt%,the BST based dielectric ceramics possess a maximum dielectric constant of 6138.When the doping amount of LZO is 4.0 wt%,the BST ceramics possess minimum dielectric loss and are minimized at 0.0058,and the resistivity reaches its maximum at 3609×G’Ω·cm.When the doping amount of LZO is 3.0 wt%,the withstand voltage strength of the BST based dielectric ceramics is maximized at E_(b)=7.8 kV/mm(DC),with a temperature variation rate of+33.67%and-47.38%.The LZO doped BST based dielectric ceramics exhibit a perovskite structure.With the increase in LZO doping,the dielectric relaxation phenomenon in BST based dielectric ceramics becomes more pronounced,and the peak shifting effect is remarkable,with the diffraction angle increased firstly and then decreased,while the grain size decreased firstly and then increased.

关 键 词：钛酸锶钡 La_(2)(ZrO_(3))_(3)O_(3) 介电性能 掺杂 陶瓷 

分 类 号：TQ174.75[化学工程—陶瓷工业]