Second-Order Topological Insulators in 2D Electronic Materials  

二维电子材料中的二阶拓扑绝缘体

作　　者：FENG Xiao-ran NIU Cheng-wang HUANG Bai-biao DAI Ying 冯晓冉;牛成旺;黄柏标;戴瑛(山东大学物理学院,晶体材料国家重点实验室,济南250100)

机构地区：[1]School of Physics,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

出　　处：《物理学进展》2025年第1期1-31,共31页Progress In Physics

基　　金：supported by the National Natu-ral Science Foundation of China(Grants No.12174220 and No.12074217);the Shandong Provincial Science Foundation for Excellent Young Scholars(Grant No.ZR2023YQ001);the Taishan Young Scholar Program of Shandong Province;the Qilu Young Scholar Pro-gram of Shandong University.

摘　　要：Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substantial potential for next-generation device applications.The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators(SOTIs).This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials,focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies.These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.高阶能带拓扑不仅丰富了我们对拓扑相的理解,还揭示了新奇的低维边界态,这在下一代器件应用中具有巨大潜力。二维材料独特的电子结构和可调控特性使其成为实现二阶拓扑绝缘体(SOTIs)的理想平台。本文概述了二维电子材料领域中SOTIs的研究进展,重点介绍了高阶拓扑特性的表征以及理论研究中提出的众多候选材料。这些研究不仅增强了我们对高阶拓扑态的理解,还丰富了实验中可行的候选材料。

关 键 词：second order topological insulator corner state 2D electronic material 

分 类 号：O469[理学—凝聚态物理]