Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808-nm laser diode  

波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808-nm激光二极管载流子泄漏的影响

作　　者：FU Meng-jie DONG Hai-liang JIA Zhi-gang JIA Wei LIANG Jian XU Bing-she 付梦洁;董海亮;贾志刚;贾伟;梁建;许并社(太原理工大学新材料界面科学与工程教育部重点实验室,山西太原030024;山西浙大新材料与化工研究院,山西太原030024;太原理工大学材料科学与工程学院,山西太原030024;陕西科技大学原子与分子科学研究所,陕西西安710021)

机构地区：[1]Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China [2]Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030024,China [3]College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China [4]Institute of Atomic and Molecular Science,Shaanxi University of Science&Technology,Xi’an 710021,China

出　　处：《中国光学(中英文)》2025年第1期186-197,共12页Chinese Optics

基　　金：国家自然科学基金(No.61904120,No.21972103);山西省“1331项目”;山西浙大新材料与化工研究院项目(No.2022SX-TD018,No.2021SX-AT001,002和003)。

摘　　要：There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.激光二极管由于载流子泄漏严重,在波导区域发生非辐射复合,进而降低了输出功率和电光转换效率。本文设计了一种新型外延结构,通过在有源区两侧势垒和波导层之间分别插入n-Ga_(0.55)In_(0.45)P和p-GaAs_(0.6)P_(0.4)材料,调控能带结构,增大了阻挡载流子泄漏的势垒高度,抑制了载流子泄漏。研究结果表明,相较于传统结构器件,泄漏电流密度降低了87.71%。在25℃注入电流密度为5 A/cm^(2)时,新型外延结构的非辐射复合电流密度降低至37.411 A/cm^(2),输出功率达12.80 W,电光转换效率达78.24%。此外,在5℃~65℃温度变化范围内,中心波长的温漂系数为0.206 nm/℃,阈值电流随温度变化的拟合直线的斜率为0.00113。本文所设计结构为制备高功率激光二级管提供了理论依据。

关 键 词：808-nm laser diode Ga_(0.55)In_(0.45)P and GaAs_(0.6)P_(0.4)insertion layers InAlGaAs quantum well carrier leakage 

分 类 号：TN248.4[电子电信—物理电子学]