Logic-in-memory cell enabling binary and ternary Boolean logics  

作　　者：Jeongyun OH Juhee JEON Yunwoo SHIN Kyougah CHO Sangsig KIM 

机构地区：[1]Department of Electrical Engineering,Korea University,Seoul 02841,Republic of Korea

出　　处：《Science China(Information Sciences)》2025年第2期366-375,共10页中国科学(信息科学)(英文版)

基　　金：partially supported by National Research Foundation of Korea Grant funded by the Korean Government(MSIT)(Grant Nos.RS-2023-00260876,2022M317A3046571);Samsung Electronics(Grant No.IO201223-08257-01);Brain Korea 21 Plus Project;a Korea University Grant。

摘　　要：In computing systems,processing and memory units have been integrated into logic-in-memory(LiM)to enhance the computational efficiency and performance.LiM has been attempted to perform not only binary but also ternary logic functions,which reduces computing complexity.Herein,we demonstrate a binary and ternary LiM(BT-LiM)cell with eight triple-gated(TG)feedback field-effect transistors(FBFETs)reconfigured into n-or p-channel modes.The TG FBFETs exhibit symmetrical latch-up voltages and an on-current ratio of 1.02 between the n-and p-channel modes,which indicates a high potential for reconfigurable logic applications.The BT-LiM cell can perform YES,NOT,AND,OR,NAND,NOR,XNOR,and XOR logic functions in a single cell because of these reconfigurable characteristics.Further,binary and ternary logic functions are realized in the cell without a programming stage,and the cell maintains the results of the logic functions under zero-bias conditions.This study achieves multifunctional LiM that can operate all binary and ternary Boolean logics.

关 键 词：logic-in-memory reconfigurable channel modes ternary logic triple-gated feedback field-effect transistors 

分 类 号：TN3[电子电信—物理电子学]