Bilinear magnetoelectric resistance induced by spin Hall effect  

作　　者：Ruiyue Chu Cheng Song 

机构地区：[1]School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China

出　　处：《Science China Materials》2025年第2期687-688,共2页中国科学(材料科学)(英文版)

摘　　要：Magnetoresistance(MR)is a fundamental transport phenomenon crucial for reading magnetic states.It also plays a key role in understanding how time-reversal symmetry breaking affects electrical resistance.Landmark discoveries of anisotropic MR[1],giant MR[2],tunneling MR[3],and spin Hall magnetoresistance[4]have driven the development of diverse spintronic devices used in data storage,computing,and sensing technologies.Typically,these MR effects do not scale linearly with the electric field(and thus,electric current).Recently,nonlinear MR,which scales specifically with the electric current(Ic),has been demonstrated.In magnetic/non-magnetic bilayers,unidirectional spin Hall magnetoresistance(USMR)[5]shows a linear dependence on Ic,with voltage scaling quadratically with the applied electric field,due to interfacial spin-dependent and electron-magnon scattering mechanisms.

关 键 词：BREAKING SYMMETRY LINEARLY 

分 类 号：O48[理学—固体物理]