基于热量计的SiC MOSFET器件损耗测量  

Device Loss Measurement for SiC MOSFET Based on Calorimeter

作　　者：伍群芳[1] 王亚强 王勤[1] 邱施瑜 WU Qunfang;WANG Yaqiang;WANG Qin;QIU Shiyu(College of Automation Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]南京航空航天大学自动化学院,南京211106

出　　处：《电气电子教学学报》2024年第6期137-140,共4页Journal of Electrical and Electronic Education

基　　金：江苏省自然科学青年基金(BK20210305);2023年江苏省高等教育教改研究课题(2023JSJG441);航空科学基金(2022Z024052003)。

摘　　要：新一代宽禁带半导体器件SiCMOSFET具有导通电阻低、开关速度快、耐高温高压等特性,广泛应用于新能源发电、电动汽车及航空航天等重要领域。SiC器件的损耗分析与测量对于其高效应用具有重要作用。基于热学法,提出了一种基于热量计的SiCMOSFET器件损耗测量方法,相较于传统电学法,所提方法产生误差为固定比例误差,且通过定功率校正可显著减小测量误差,从而实现精确且低成本的SiC MOSFET器件损耗测量。该方法有助于学生从不同角度对功率器件损耗问题的理解,更好地掌握相关专业知识。The wide band gap semiconductor SiC MOSFET power devices have the characteristics of low on-resistance,fast switching speed,high-temperature and high-voltage resistance,and they are widely used in new energy power generation,electric vehicles and aerospace,etc.The loss analysis and measurement of SiC devices play an important role in their efficient application.Based on the thermal method,a calorimeter for the device loss measurement of SiC MOSFET is presented.Compared with the conventional electrical method,the error is a fixed proportion error and the measurement error can be significantly reduced by the fixed power correction.As a result,the device loss can be measured accurately with a relatively low cost.It is helpful for students to understand the loss of power devices from different perspective,and better understand relevant knowledge.

关 键 词：热量计 器件损耗 碳化硅MOSFET 

分 类 号：TN386[电子电信—物理电子学]