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作 者:李根 祝捷 张中印 樊轩辉 周敬 唐大伟 LI Gen;ZHU Jie;ZHANG Zhongyin;FAN Xuanhui;ZHOU Jing;TANG Dawei(School of Energy and Power Engineering,Dalian University of Technology,Dalian 116024,China)
机构地区:[1]大连理工大学能源与动力学院,辽宁大连116024
出 处:《热科学与技术》2024年第6期594-602,共9页Journal of Thermal Science and Technology
基 金:国家自然科学基金重点国际合作资助项目(51720105007);国家自然科学基金资助项目(51976025)
摘 要:随着半导体与微电子技术的高速发展,高频器件内金属薄膜与电介质间的电子-界面热输运成为重要的研究课题。本文基于双温度模型讨论了金膜非平衡传热过程中可能存在的4种边界条件。结合时域热反射法测量了不同厚度的金膜,其中,79 nm金膜在电子-声子耦合过程中,受到金/基底界面的影响较小,可以忽略,获得了与理论预测结果一致的电子-声子耦合因子;对于较薄的50 nm金膜,边界上的电子-声子散射对超快非平衡传热过程的贡献不可忽略,因此测量得到的电子-声子耦合因子低于79 nm金膜的值。研究结果揭示了界面载流子散射对不同厚度和基底条件下的金属薄膜内超快非平衡热输运过程的贡献规律,为深入研究微纳电子器件的微观热输运问题提供了重要的实验支撑。With the rapid development of semiconductor and microelectronics technology,electron-interface thermal transport between metal thin films and dielectrics in high-frequency devices has become a critical research focus.In this work,gold films of different thicknesses were measured using the time-domain thermoreflectance method.Based on the two-temperature model,the non-equilibrium heat transfer in these gold films were discussed under four different boundary conditions.Notably,for the 79nm gold film,the influence of the gold/substrate interface on the electron-phonon coupling process was relatively low and could be ignored,aligning well with theoretical predictions.However,for the thinner 50 nm gold film,the contribution of electron-phonon boundary scattering to the ultrafast non-equilibrium heat transfer process was much stronger and could not be neglected.As a result,the measured electron-phonon coupling factor for the 50nm film was lower than that of 79nm sample.This study provides valuable insights into the role of interfacial carrier scattering in ultrafast nonequilibrium heat transport process in metal nano-films with different thicknesses and substrates.Furthermore,it offers an in-depth experimental analysis of heat transport mechanisms relevant to micro-nano electronic devices.
关 键 词:时域热反射 金纳米薄膜 电子-声子耦合 超快激光 电子-界面热输运
分 类 号:TB331[一般工业技术—材料科学与工程]
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