基于氮化镓0.1µm工艺的W波段宽带低噪声放大器芯片  

A w-band wideband low noise amplifier MMIC based on 0.1μm gallium nitride technology

作　　者：陈岩 王维波[1] 王光年 陈忠飞 祁路伟 杨帆 张亦斌 吴少兵[1] CHEN Yan;WANG Weibo;WANG Guangnian;CHEN Zhongfei;QI Luwei;YANG Fan;ZHANG Yibin;WU Shaobing(Nanjing Electronic Devices Institμte,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《空间电子技术》2025年第1期103-108,共6页Space Electronic Technology

基　　金：国家重点研发计划(编号:2023YFF0718203)。

摘　　要：文章针对高速宽带无线通信系统、仪器仪表、汽车雷达、安检成像等领域对低噪声放大器的低噪声、高增益、大动态范围和高可靠性需求,研发了一款基于0.1µm氮化镓(GaN)低压工艺的宽带低噪声放大器芯片,可在W波段75GHz~110GHz全频带内工作。通过链路分析结合管芯线性模型、非线性模型和噪声模型设计的低噪声放大器采用1∶1∶1∶2的级联推动比。通过电磁软件仿真,在确保较低功耗的同时,提高线性增益,并实现噪声系数和1 dB压缩点输出功率的良好匹配。对所设计的W波段低噪声放大器芯片进行在片测试和装盒测试,在漏极电压+5 V,栅极电压-0.7 V的测试条件下,静态工作电流为50 mA。实测结果表明,在75 GHz~110 GHz,小信号增益为21dB,噪声系数3.5dB。芯片的尺寸为2.3mm×1.5mm×0.05mm。所研制的W波段低噪声放大器芯片在保持优异噪声性能的同时实现了宽带高增益,为新一代毫米波通信系统及高端仪器仪表提供了关键器件支撑。The paper presents a novel broadband low noise amplifier(LNA)designed using 0.1μm GaN low-voltage technology,targeting high-performance requirements in various applications,including highspeed wireless communication,instrumentation,automotive radar,and security imaging.Operating within the W-band 75 GHz~110 GHz,the LNA's design integrates a cascaded push-pull configuration with a 1∶1∶1∶2 ratio,optimizing linear gain and noise performance.By leveraging link analysis to balance the chip’s linear,nonlinear,and noise models,the amplifier minimizes power consumption while achieving a favorable noise figure and 1 dB compression output power.The assembled low-noise amplifier chip,following probe-on-chip and fixture testing,operates at a static working current of 50 mA with a drain voltage of+5 V and gate voltage of−0.7 V.Actual tests reveal a small signal gain of 21 dB and a noise figure of 3.5 dB in the 75 GHz~110 GHz frequency band.The compact chip size is 2.3 mm×1.5 mm×0.05 mm.

关 键 词：W波段 宽带 0.1μm氮化镓 低噪声放大器 

分 类 号：TN323[电子电信—物理电子学] TN385[航空宇航科学与技术—飞行器设计] V443