一种多档位自适应CMOS探测器的设计与性能测试  

Design and Performance Testing of a Multi⁃level Adaptive CMOS Detector

作　　者：于得福 李向阳[2] YU Defu;LI Xiangyang(School of Microelectronics,Shanghai University,Shanghai 201800,CHN;Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,National Key Laboratory of Infrared Detection,Shanghai 200083,CHN)

机构地区：[1]上海大学微电子学院,上海201800 [2]中国科学院上海技术物理研究所红外探测全国重点实验室,上海200083

出　　处：《光电子技术》2024年第4期311-316,共6页Optoelectronic Technology

基　　金：国家自然科学基金重点项目(42330110)。

摘　　要：为了满足光强剧烈变化的应用需求,设计了一种片上自适应光强的CMOS探测器。通过在像素上集成多挡积分电路和比较控制电路将入射光强分为若干亮度区间,实现了像素在大能量范围的自适应信号读出。器件采用帧内长短曝光相结合的工作模式,短曝光输出用于信号的比较判断和增益档位的自动调节,长曝光输出光强信号档位和光强匹配的信号电压。为了验证设计的可行性和适用性,采用0.5μm 5 V标准CMOS工艺对探测器进行5元线阵实物样品测试,测试结果表明,该探测器在帧时1.16 ms、读出速率为1 MHz的情况下输出信号稳定,光强在1~3 000 lx范围内稳定有四个档位的信号读出,相较于单增益读出电路,多档自适应读出的饱和光强提高了7.5倍,动态范围相对提升了17.5 dB。In order to meet the application requirements of drastic changes in light intensity,a CMOS detector with on-chip adaptive light intensity was designed.By integrating multiple integral cir-cuits and comparative control circuits on pixels,the incident light intensity was divided into several brightness ranges,achieving adaptive signal readout of pixels in a large energy range.The device ad-opted a working mode that combined intra frame long and short exposure.Short exposure output was used for signal comparison and automatic adjustment of gain level,while long exposure output was used for signal voltage matching with light intensity signal level.The CMOS detector chip with a 5-el-ement linear array physical sample was fabricated with 0.5μm 5 V standard CMOS process.The test results showed that the detector's output signal was stable at frame time of 1.16 ms and readout rate of 1 MHz,and there were four stable levels of signal readout in the light intensity range of 1~3000 lx.Compared with a single gain readout circuit,the saturation light intensity of multi-level adaptive read-out increased by 7.5 times,and the dynamic range was relatively improved by 17.5 dB.

关 键 词：互补金属氧化物半导体探测器 自适应技术 多档位调整 长短曝光 

分 类 号：TN386.1[电子电信—物理电子学]