Large-scale Preparation of Black CeO_(x) with Stable Oxygen Vacancies  

作　　者：PENG Huan JIANG Mengmeng YE Jinfeng WANG Lei DING Shunmin CHEN Chao 

机构地区：[1]College of Materials and Chemical Engineering,Pingxiang University,Pingxiang,337055,P.R.China [2]Key Laboratory of Jiangxi Province for Environment and Energy Catalysis,College of Chemistry and Chemical Engineering,Nanchang University,Nanchang,330031,P.R.China

出　　处：《Chemical Research in Chinese Universities》2025年第1期40-47,共8页高等学校化学研究(英文版)

基　　金：supported by the Science and Technology Research Program of the Education Department of Jiangxi Province,China(No.GJJ2202130);the National Natural Science Foundation of China(No.22262022).

摘　　要：Oxygen vacancy in ceria is a crucial regulation factor for modifying materials.The reduced oxygen vacancy will undergo rapid recombination and deactivation due to the imbalance perturbation of active oxygen species,thereby restricting their larger-scale application.In this work,we proposed a strategy to stabilize oxygen vacancy in four black CeO_(x)(Si)(0<x<2)by quartz sand doping reduction.The formation of a Ce-O_(v)-Si(Ov denoted as oxygen vacancy)interface,instrumental in constructing stable oxygen vacancies,is facilitated by rich hydroxyl groups.Characterizations of CeO_(x)(Si)reveal that the heterogeneous hydrogen at the Ce-O-Si interface encourages the lattice distortion in ceria to obtain stable oxygen vacancies.Guided by the reusable feature,quartz sand doping reduction is a facile and feasible strategy to stabilize the oxygen vacancy of black CeO_(x) for advanced materials on a large scale.

关 键 词：Black CeO_(x) Oxygen vacancy Ce-O_(v)-Si STABILIZATION Quartz sand 

分 类 号：O61[理学—无机化学]