基于肖特基势垒可重置场效应晶体管的同或逻辑门  

XNOR Logic Gate Based on Schottky Barrier ResettableField-Effect Transistor

作　　者：王冰 刘溪[1] WANG Bing;LIU Xi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2025年第1期24-27,共4页Microprocessors

摘　　要：为减少晶体管的使用数量来实现同或逻辑功能,提高单个晶体管的逻辑密度,提出一种基于肖特基势垒可重置场效应晶体管的同或逻辑门。器件的源端和漏端均采用金属硅化物NiSi,在源漏电极处与硅的导带及价带之间形成相似的肖特基势垒。通过Silvaco TCAD软件进行分析验证,研究器件在不同栅极电压下的转移特性曲线、能带变化和载流子浓度分布等规律。实验结果表明,该设计使正向导通电流有所提高,只用一个晶体管即可实现同或逻辑功能,相比传统CMOS提高了半导体芯片的集成度,对于集成电路研发具有重要的技术价值。To enhance the logic density of individual transistors and reduce the number of transistors required for XNOR logic implementation,a novel XNOR logic gate based on a Schottky barrier resettable field-effect transistor is study proposed.The device uses NiSi as the metallic compound for both source and drain terminals,forming similar Schottky barriers between the source/drain electrodes and silicon's conduction and valence bands.Analysis and verification are conducted using Silvaco TCAD software to study the device's transfer characteristics,energy band variations,and carrier concentration distributions under different gate voltages.Results show that this design improves forward conduction current and achieves XNOR logic functionality using only one transistor,increasing semiconductor chip integration density compared to traditional CMOS technology,which has significant technical value for integrated circuit development.

关 键 词：肖特基势垒 可重置 XNOR逻辑门 

分 类 号：TN386[电子电信—物理电子学]