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作 者:Cheng-Long Zheng Pei-Nan Ni Yi-Yang Xie Patrice Genevet
机构地区:[1]Henan Key Laboratory of Diamond Optoelectronic Materials and Devices,Key Laboratory of Materials Physics,Ministry of Education,School of Physics,Zhengzhou University,Zhengzhou 450052,China [2]Key Laboratory of Optoelectronics Technology,Beijing University of Technology,Ministry of Education,Beijing 100124,China [3]Colorado School of Mines,1523 Illinois St.,Golden,CO 80401,USA
出 处:《Opto-Electronic Advances》2025年第1期5-30,共26页光电进展(英文)
基 金:supported by the National Natural Science Foundation of China(62374150);Natural Science Foundation of Henan(242300421216);C.Zheng acknowledges the support of China Postdoctoral Science Foundation(Grant No.2023TQ0296);the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20232389);Y.Xie acknowledges the support of National Natural Science Foundation of China(62074011,62134008);Beijing Outstanding Young Scientist Program(JWZQ20240102009).
摘 要:Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.
关 键 词:OPTOELECTRONICS NANOPHOTONICS metasurfaces SEMICONDUCTOR
分 类 号:TN248.4[电子电信—物理电子学] TN36
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