SiC MOSFET结温监测与控制技术综述  

A Review of Junction Temperature Monitoring and Control Methods for SiC MOSFETs

作　　者：张擎昊 郑大勇 张品佳 ZHANG Qinghao;ZHENG Dayong;ZHANG Pinjia(State Key Lab of Security Control and Simulation of Power Systems and Large Scale Generation Equipment(Tsinghua University),Haidian District,Beijing 100084,China;Beijing Jiaotong University,Haidian District,Beijing 100091,China)

机构地区：[1]电力系统及大型发电设备安全控制和仿真国家重点实验室(清华大学),北京市海淀区100084 [2]北京交通大学,北京市海淀区100091

出　　处：《中国电机工程学报》2025年第3期1034-1051,I0019,共19页PROCEEDINGS OF THE CHINESE SOCIETY FOR ELECTRICAL ENGINEERING

摘　　要：碳化硅(silicon carbide,SiC)金属-氧化物-半导体场效应管(metal-oxide-semiconductor field effect transistor,MOSFET)性能优越、发展迅猛,在工业界获得广泛应用。其失效与结温息息相关,故SiC MOSFET结温监控技术至关重要,近年来成为研究热点。文中将该技术分为经典结温监测、考虑老化影响的结温监测、结温控制3部分。对于经典结温监测技术,重点介绍热模型法和热敏电参数法的原理、模型、发展历程、缺点及优势;对于考虑老化影响的结温监测技术,重点分析老化对结温监测的影响,论述老化补偿技术的必要性并指出现有方法的局限性;对于结温控制技术,分析其意义,重点介绍内部控制法和外部控制法的原理,比较各类方法的优劣。最后,综合以上分析,指出SiC MOSFET结温监控领域存在的关键问题和发展方向,旨在为相关研究人员提供参考。SiC metal-oxide-semiconductor field effect transistor(MOSFET)has excellent performance and rapid development in the industrial applications.Its failure is closely related to junction temperature,making junction temperature monitoring technology for SiC MOSFET crucial and a focal point of recent years.This paper divides this technology into three parts:classical junction temperature monitoring,junction temperature monitoring considering the aging effect and junction temperature control.For the classical junction temperature monitoring technology,the principle,model,development,disadvantages and advantages of thermal model methods and thermal sensitive electrical parameter methods are introduced.For the junction temperature monitoring technology considering the aging effect,the effect of aging on junction temperature monitoring is analyzed,the necessity of aging compensation technology is discussed,and the limitations of existing methods are pointed out.As for the junction temperature control technology,the significance is analyzed,the principle of internal control method and external control method is introduced,and the advantages and disadvantages of various methods are compared.Finally,based on the above analysis,this paper points out the key problems and future development directions in the field of SiC MOSFET junction temperature monitoring,aiming to provide reference for relevant researchers.

关 键 词：碳化硅金属-氧化物-半导体场效应管 温变机理 结温监测 结温控制 器件老化 

分 类 号：TM46[电气工程—电器]