机构地区:[1]渤海大学师范学院,辽宁锦州121000 [2]渤海大学物理科学与技术学院,辽宁锦州121000 [3]大连达利凯普科技股份有限公司,辽宁大连116600 [4]吉林大学超硬材料国家重点实验室,吉林长春130000
出 处:《光谱学与光谱分析》2025年第3期712-716,共5页Spectroscopy and Spectral Analysis
基 金:国家自然科学基金面上项目(12374368);辽宁省教育厅青年项目(LJKQZ2021137)资助。
摘 要:SiO_(2)纳米材料作为典型的纳米绝缘材料,其量子尺寸限制效应和不同类元素独特的光电特性相结合,在生物医药方面及纳米器件集成电子领域具有广泛应用。随着科学时代的到来,研究成果日益增加,稀土掺杂纳米发光材料的研究工作逐渐展开,其应用范围也很广阔,如:信息显示、激光材料、光纤通信、甚至荧光探测。Sm^(3+)是一种重要的稀土氧化物离子材料,它在太阳能电池、纳米电子器件、半导体玻璃、生物化学传感器和纳米磁体等领域具有潜在应用。本研究使用热蒸发法合成了Sm^(3+)掺杂SiO_(2)纳米棒材料。通过扫描电镜、X射线衍射谱和拉曼散射光谱等手段对样品进行分析发现:Sm^(3+)掺杂SiO_(2)纳米棒为四方相晶体;随沉积温度降低,纳米棒直径增大,沉积密度减少,样品形貌由纳米棒状结构逐渐变为微米颗粒;由于Sm^(3+)离子半径较大,导致掺杂后SiO_(2)晶格衍射向小角度偏移,晶格常数增加,晶胞体积增大。Sm^(3+)掺杂SiO_(2)纳米棒的生长过程没有金属催化剂的影响。在饱和蒸汽压和Ar气流作用下,气态SiO_(2)会顺着气流方向沉积在温度不同的衬底区域上。在高温区优先沉积成晶核,由于腔体内残余氧气含量逐渐被消耗降低,纳米线在生长过程中直径逐渐减小,导致生成物顶部为针状。我们推断在衬底生成纳米线的同时Sm^(3+)替代少量Si^(4+)进入SiO_(2)晶格中。而在低沉积温度的基底上,随着腔体内氧含量降低,原子扩散驱动力弱,限制一维结构的生长,易生长出零维结构。Sm^(3+)掺杂SiO_(2)纳米棒的制备遵循气-固(VS)生长机制。Sm^(3+)掺杂SiO_(2)纳米棒的光学性能使用紫外吸收光谱、光致发光光谱进行分析,发现了Sm^(3+)掺杂纳米材料会促进晶体结构由单斜晶相向四方晶相的转换,进而引起UV谱中吸收带蓝移,文中实验制备的四方结构SiO_(2)纳米材料紫外吸收边蓝移,对应的带As a typical nano-insulating material,SiO_(2)nanomaterial has quantum size limitations.Combined with the unique photoelectric characteristics of different elements,the effect is widely used in biomedicine and nanodevice-integrated electronics.With the advent of the scientific era,the research results are increasing daily.The research work of rare earth-doped nano-luminescent materials is gradually launched.Its broad application scope includes information display,laser materials,optical fiber communication,and fluorescence detection.Sm^(3+)is an important rare earth oxide ion material.It has potential applications in solar cells,nanoelectronic devices,semiconductor glass,biochemical sensors,and nanomagnets.In this experiment,Sm^(3+)doped SiO_(2)nanorods were successfully prepared by thermal evaporation.Characterization tests using scanning electron microscopy,X-ray diffraction,and Raman scattering spectroscopy revealed that Sm^(3+)doped SiO_(2)nanorods have a tetragonal crystal structure.With the decrease of deposition temperature,the diameter of the nanorod increases,the deposition density decreases,and the morphology of the sample changes from a nanorod-like structure to a micro-particle gradually;after doping,the diffraction of the SiO_(2)lattice shifts to a small angle,the lattice constant increases,and the cell volume increases.The growth process of Sm3+doped SiO_(2)nanorods was not affected by metal catalysts.Under saturated vapor pressure,gaseous SiO_(2)will deposit on substrate regions with different temperatures along the direction of carrier gas flow.Regions with higher temperatures tend to deposit and nucleate preferentially.In the low-temperature region,the oxygen diffusion driving force decreases,and the nucleation growth opportunity decreases,inhibiting the growth of one-dimensional nanostructures and making it easier to form nanoparticles.The synthesis of Sm^(3+)doped SiO_(2)nanorods follows a gas-solid(VS)growth mechanism.An analysis of the optical performance of Sm^(3+)doped SiO_(2)nanorods by UV
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