近紫外GaN基量子阱结构的局域和极化效应  

Localization and Polarization Effects in Near-Ultraviolet GaN-Based Quantum Well Structures

作　　者：武智波 贺龙飞 吴宗豪 徐明升[1] 王成新 徐现刚[1] 冀子武[1] WU Zhibo;HE Longfei;WU Zonghao;XU Mingsheng;WANG Chengxin;XU Xiangang;JI Ziwu(School of Integrated Circuits,Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;Institute of Semiconductor Research,Guangdong Academy of Sciences,Guangzhou 510650,China;Shandong Inspur Huaguang Optoelectronics Co.,Ltd.,Weifang 261061,China)

机构地区：[1]山东大学集成电路学院,新一代半导体材料研究院,山东济南250100 [2]广东省科学院半导体研究所,广东广州510650 [3]山东浪潮华光光电子股份有限公司,山东潍坊261061

出　　处：《聊城大学学报(自然科学版)》2025年第2期218-223,共6页Journal of Liaocheng University:Natural Science Edition

基　　金：国家自然科学基金项目(52272157,51872167);广州市基础研究计划项目(202201010679)资助。

摘　　要：在具有蓝宝石衬底的AlN模板上外延生长了近紫外In 0.01 Ga 0.99 N/Al 0.15 Ga 0.85 N多量子阱结构,对其荧光(PL)特性进行了测量。结果显示,该结构的PL峰位能量和线宽的温度行为分别呈“S”形(降低-增加-降低)和“W”形(变窄-变宽-变窄-变宽),而其激发功率行为则分别呈“N”形(增加-降低-增加)和“V”形(变窄-变宽)。这些行为表明了该量子阱结构中载流子复合发光的局域特征和量子限制斯塔克效应的库伦屏蔽效应。前者被归因于阱厚起伏所导致的阱层内的势起伏,而后者则被归因于阱/垒晶格失配所诱发的极化电场。此外,该结构的积分PL强度的温度行为也证实了其阱层内局域深度的非均一性。A near-ultraviolet InGaAlN multiple quantum well structure was epitaxially grown on an AlN template with a sapphire substrate,and its photoluminescence(PL)properties were measured.The measurement results show that the PL peak energy and linewidth respectively exhibit an S-shaped(decreasing-increasing-decreasing)and a W-shaped(narrowing-widening-narrowing-widening)temperature dependences,and an N-shaped(increasing-decreasing-increasing)and a V-shaped pattern(narrowing-widening)excitation power dependences.These behaviors show the localized characteristics,and Coulomb screening effect of quantum-confined Stark effect,of the carrier recombination in the structure.The former is ascribed to potential fluctuations caused by fluctuations of well widths,while the latter is attributed to the well/barrier lattice mismatch-induced polarization field.Furthermore,the temperature dependence of the integrated PL intensity of the structure also confirms the inhomogeneity in the depths of the localized states in the wells.

关 键 词：近紫外LED GaN基多量子阱 光致发光 局域效应 量子限制斯塔克效应 

分 类 号：TN23[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]