RF-PECVD制备铜基石墨烯薄膜及其力学性能研究  

Research on Preparation of Copper-based Graphene Films by RF-PECVD and Its Mechanical Properties

作　　者：马会中[1] 及元书 张兰[1] MA Huizhong;JI Yuanshu;ZHANG Lan(College of Mechanics and Safety Engineering,Zhengzhou University,Zhengzhou 450000,China)

机构地区：[1]郑州大学力学与安全工程学院,河南郑州450000

出　　处：《热加工工艺》2025年第2期59-63,67,共6页Hot Working Technology

摘　　要：采用射频等离子体化学气相沉积设备,以甲烷为气相碳源,以紫铜箔片为基底制备石墨烯薄膜镀层。研究了温度对其力学性能的影响。结果表明:随反应温度的增加,铜基石墨烯薄膜的平均摩擦系数呈下降趋势,其显微硬度与抗腐蚀能力均呈先上升后下降趋势。当温度为750℃时,铜基石墨烯薄膜缺陷度相对达到最低,微观形貌平整性与覆盖率最高,其平均摩擦系数、显微硬度与腐蚀电位分别为0.186、113.6 HV、0.805 V。此时,样品的综合力学性能达到相对最优值。Using radio frequency plasma chemical vapor deposition equipment,taking methane as the gas phase carbon source and copper foil as the substrate,the graphene film coating was prepared,and the effects of temperature on its mechanical properties were studied.The results show that with the increase of the reaction temperature,the average friction coefficient of the copper-based graphene film shows a downward trend,and its microhardness and corrosion resistance both increase first and then decline.When the temperature is 750℃,the defect degree of the copper-based graphene film is relatively lowest,and the microscopic morphology flatness and coverage are highest;its average friction coefficient,microhardness and corrosion potential are 0.186,113.6 HV and 0.805 V,respectively.At this time,the comprehensive mechanical properties of the sample reach a relatively optimal value.

关 键 词：射频等离子体化学气相沉积 铜基石墨烯薄膜 力学性能 温度因素 

分 类 号：TG176[金属学及工艺—金属表面处理]