退火对碲镉汞材料的影响  

Effect of annealing on HgCdTe materials

作　　者：李浩冉 戴永喜 王娇 赵东生 马腾达 米南阳 LI Hao-ran;DAI Yong-xi;WANG Jiao;ZHAO Dong-sheng;MA Teng-da;MI Nan-yang(North China Research Institute of Electro-Optic,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2025年第1期81-84,共4页Laser & Infrared

摘　　要：本文通过改变碲镉汞材料退火的汞量,研究了汞蒸气压对碲镉汞材料表面形貌、位错密度、晶体质量及电学特性的影响。研究发现,在3倍正常汞量条件下退火后,表面形貌平坦,粗糙度(Ra)达到了0.235 nm,晶体质量最低降至44.7 arcsec位错密度降低至7.1×10^(4) cm^(-2)。霍尔测试结果表明该材料已经完全转变为N型。In this paper,the effects of mercury vapor pressure on the surface morphology,dislocation density,crystal quality and electrical properties of CdTe materials are investigated by varying the amount of mercury used for annealing of CdTe materials.It is found that after annealing at three times the normal mercury amount,the surface morphology is flat,the roughness(Ra)reaches 0.235 nm,and the crystal mass decreases to a minimum of 44.7 arcsec dislocation density to 7.1×10^(4) cm^(2).The Hall test results show that the material has been completely transformed to N-type.

关 键 词：汞蒸气压 位错密度 霍尔测试 

分 类 号：TN205[电子电信—物理电子学] TN213