渐变组分背势垒GaN HEMT器件特性研究  

A Study on the Characteristics of Graded Composition Back-barrier GaN HEMT Devices

作　　者：张瑞浩 万发雨[1] 徐儒 徐佳闰 李月华 宋润陶 ZHANG Ruihao;WAN Fayu;XU Ru;XU Jiarun;LI Yuehua;SONG Runtao(College of Electronic and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China)

机构地区：[1]南京信息工程大学电子与信息工程学院,南京210044

出　　处：《微波学报》2025年第1期26-31,共6页Journal of Microwaves

基　　金：国家重点研发计划(2022YFE0122700)。

摘　　要：高频氮化镓微波功率器件的短沟道效应是限制其射频性能的重要原因,通常采用背势垒结构来提高二维电子气的限域性,抑制短沟道效应。然而背势垒层的加入会增加寄生电阻与栅极电容,使电流增益截止频率f_(t)与最大震荡频率f_(max)降低。因此,本文采用了一种铝组分渐变的铝氮化镓背势垒结构,在一定程度上提高了器件的f_(t)和f_(max)。研究结果表明:与组分为0.05的固定组分背势垒相比,0~0.1渐变组分背势垒器件的最大震荡频率f_(max)最高提升了11.1 GHz,达到150.9 GHz。其射频功率特性也得到了明显改善,当工作频率为8 GHz时,最大输出功率密度达到5.2 W/mm,功率增益达到14.8 dB,功率附加效率达到了30.3%。The short channel effect of high-frequency gallium nitride microwave power devices is an important reason that limits their radio frequency performance.The back-barrier structure is usually used to improve the confinement of_(t)he two-dimensional electron gas and suppress the short channel effect.However,the addition of a back-barrier layer will increase Parasitic resistance and gate capacitance which reduce the cut-off frequency f_(t) and maximum oscillation frequency f_(max).Therefore,a graded aluminum component aluminum gallium nitride back-barrier structure is adopted,which improves the f_(t) and f_(max)to a certain extent.The results show that compared with the fixed component back-barrier,the f_(max)of_(t)he gradient component back-barrier device has increased by 11.1 GHz to 150.9 GHz.Its radio freuqncy power characteristics have also been significantly improved.When the operating frequency is 8 GHz,the maximum power density reaches 5.2 W/mm,the power gain reaches 14.8 dB and the power added efficiency reaches 30.3%.

关 键 词：氮化镓基高电子迁移率晶体管器件 渐变组分背势垒结构 短沟道效应 二维电子气限域性 

分 类 号：TN122[电子电信—物理电子学]