基于GaN功放的X波段120 W发射组件设计  

Design of X-band 120 W Transmitting Module Based on GaN Power Amplifier

作　　者：王浪 吕高庆 王朝阳 WANG Lang;LU Gaoqing;WANG Chaoyang(AVIC Leihua Electronic Technology Research Institute,Wuxi 214082,China)

机构地区：[1]中国航空工业集团公司雷华电子技术研究所,无锡214082

出　　处：《微波学报》2025年第1期32-38,共7页Journal of Microwaves

摘　　要：文中采用三级功率放大电路拓扑结构,利用氮化镓(GaN)微波功放管,通过设计功放射频电路与控制保护电路实现了X波段高增益120 W发射组件的研制。主要对发射组件内部的射频电路展开了深入的研究,具体包括:高隔离GaN功放偏置电路、GaN功放腔体谐振仿真、高方向性微带定向耦合器以及小型化微带阶跃变换电路。发射组件测试结果表明,X波段80 MHz频率范围内,在输入功率为10 dBm、25μs脉宽、2%占空比TTL调制信号输入条件下,输出功率大于120 W,增益大于40 dB,顶降小于6%,脉冲前后沿均小于60 ns,杂散小于-62 dBc,谐波抑制大于68 dB。发射组件性能良好,满足系统使用要求。The X-band high-gain 120 W transmitting module is developed by using three-stage power amplifier topology and gallium nitride(GaN)microwave power amplifier,and by designing the power amplifier radio-frequency(RF)circuit and control protection circuit.The RF circuit inside the transmitter module is deeply studied,including:high isolation GaN power amplifier bias circuit,GaN power amplifier cavity resonance simulation,high-directivity microstrip directional coupler and miniaturized microstrip step conversion circuit.The transmitting module test results show that,in the X-band frequency range of 80 MHz and under the conditions of input power of 10 dBm,25μs pulse width and 2%duty cycle TTL modulation signal input,the output power is greater than 120 W,the gain is greater than 40 dB,the top drop is less than 6%,the front and back edge of the pulse is less than 60 ns,and the spurious suppression is less than-62 dBc,the harmonic suppression is greater than 68 dB.The solid-state power amplifier module is fine in performance and can meet the requirements of system.

关 键 词：X波段 氮化镓功放 发射组件 射频电路 

分 类 号：TN722.75[电子电信—电路与系统] TN95