连续SiC纤维增强Ti60复合材料的热等静压致密化及热应力分布  

Hot Isostatic Pressing Densification and Thermal Stress Distribution of Continuous SiC Fiber Reinforced Ti60 Composites

作　　者：黄靖翔 黄浩 周文龙[1] 王敏涓 陈国清[1] 付雪松[1] HUANG Jingxiang;HUANG Hao;ZHOU Wenlong;WANG Minjuan;CHEN Guoqing;FU Xuesong(Dalian University of Technology,Dalian 116024,China;AECC Beijing Institute of Aeronautical Materials,Beijing 110095,China)

机构地区：[1]大连理工大学,大连116024 [2]中国航发北京航空材料研究院,北京110095

出　　处：《航空制造技术》2025年第1期101-109,共9页Aeronautical Manufacturing Technology

基　　金：国家科技重大专项(HT-J2019-VI-0007-0121)。

摘　　要：利用ABAQUS有限元模拟软件对SiC/Ti60复合材料热等静压(HIP)过程进行仿真,建立了纤维体积分数为25%的SiCf/Ti60复合材料代表性体积单元(RVE)模型,分析复合材料热等静压致密化过程及残余应力分布特征。分析结果表明,复合材料的塑性变形及致密化主要发生在保温保压阶段,界面层的热残余应力特征与钛合金基体和SiC纤维存在显著差异。界面层中的TiC反应层的周向应力较SiC纤维出现应力突变,压应力值增加205 MPa左右。C涂层和TiC界面层上的轴向应力接近于0,降低了SiC纤维(压应力)与基体(拉应力)间的应力梯度。复合材料中的C层厚度会影响界面层热残余应力,当C层厚度从1.5μm增大到2.5μm时,界面层及周边区域的径向应力减小了7 MPa,TiC界面层上的周向应力减小了20 MPa。提高热等静压保温温度能够增强致密化效果,但是会使界面层及附近区域的残余应力略有增大。The hot isostatic pressing(HIP)process of SiC/Ti60 composites was simulated using ABAQUS finite element simulation software.A representative volume element(RVE)model for SiCf/Ti60 composites with a fiber volume fraction of 25%was established to analyze the hot isostatic pressing densification process and residual stress distribution characteristics of the composites.The analysis results show that the plastic deformation and densification of the composites mainly occur during the thermal and pressure holding stages,and the thermal residual stress characteristics of the interface layer are significantly different from those of the titanium alloy matrix and SiC fibers.The circumferential stress of the TiC reaction layer in the interface layer has a sudden change compared to that of the SiC fiber,and the compressive stress value increases by about 205 MPa.The axial stress on the C-coating and TiC interface layer approaches zero,reducing the stress gradient between the SiC fiber(compressive stress)and the substrate(tensile stress).The thickness of the C layer in composite materials can affect the thermal residual stress of the interface layer.When the thickness of the C layer increases from 1.5μm to 2.5μm,the radial stress in the interface layer and surrounding areas decreased by 7 MPa,and the circumferential stress in the TiC interface layer decreased by 20 MPa.Increasing the holding temperature of hot isostatic pressing can enhance the densification effect,but it will slightly increase the residual stress in the interface layer and adjacent areas.

关 键 词：钛基复合材料(TMCs) 热等静压(HIP) 界面层 残余应力 仿真 

分 类 号：V258[一般工业技术—材料科学与工程]