RF-PECVD生长参数对石墨烯薄膜品质的影响  

Effect of RF-PECVD Growth Parameters on the Quality of Graphene Films

作　　者：袁强华[1] 任江枫 殷桂琴[1] YUAN Qianghua;REN Jiangfeng;YIN Guiqin(College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730030,China)

机构地区：[1]西北师范大学物理与电子工程学院,兰州730030

出　　处：《真空科学与技术学报》2025年第2期98-105,共8页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(12165019)。

摘　　要：对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加而降低,但是薄膜的厚度随着高频功率的增加而减小。在3 Torr及5 Torr的条件下,石墨烯薄膜存在着较多的边界状缺陷。甲烷/氩气流量比为10:30、生长时间为40 min时,能够生长出品质较好的石墨烯薄膜。生长温度对石墨烯薄膜的生长影响较大,在300℃时,镍基底表面无法生长出石墨烯薄膜,并且生长温度低于600℃时,都无法生长出品质较好的石墨烯薄膜。最后发现,相同的生长条件,在镍基底上生长的石墨烯薄膜厚度更小,但是铜基底生长的石墨烯薄膜缺陷更少,品质更好,这与薄膜在两种基底上不同的生长方式有关。The paper compares the morphology and quality of graphene films grown under different process conditions,and studies the effects of high-frequency power,discharge voltage,gas flow ratio,growth time,substrate temperature and substrate type on the quality of graphene films prepared by RF-PECVD in dual-frequency discharge.The experimental results show that the concentration of defects in graphene decreases with the increase of high-frequency power,but the thickness of the film decreases with the increase of high-frequency power.Under the conditions of 3 Torr and 5 Torr,graphene films may have more boundary defects.When the flow ratio of methane/argon is 10:30 and the growth time is 40 min,graphene films of good quality can be grown.The growth temperature has a great influence on the growth of graphene films,and at 300℃,graphene films cannot grow on the surface of nickel substrates,and when the growth temperature is lower than 600℃,graphene films with better quality cannot be grown.Finally,it is found that under the same growing conditions,the graphene film grown on the nickel substrate is less thick,but the graphene film grown on the copper substrate had fewer defects and better quality,which is related to the different growth modes of the film on the two substrates.

关 键 词：射频等离子体增强化学气相沉积 双频放电 石墨烯薄膜 

分 类 号：O539[理学—等离子体物理]