反应精馏系统驱动硅烷制备过程的模拟及优化  

SIMULATION AND OPTIMIZATION OF MONOSILANE PREPARATION PROCESS DRIVEN BY REACTIVE DISTILLATION SYSTEM

作　　者：张旗 赵丹 徐倩 袁兴平 郭李杰 侯彦青[1] Zhang Qi;Zhao Dan;Xu Qian;Yuan Xingping;Guo Lijie;Hou Yanqing(School of Metallurgy and Energy Engineering,Kunming University of Science and Technology,Kunming 650031,China)

机构地区：[1]昆明理工大学冶金与能源工程学院,昆明650031

出　　处：《太阳能学报》2025年第2期381-386,共6页Acta Energiae Solaris Sinica

摘　　要：模拟含有杂质的三氯硅烷经过歧化反应生产高纯度硅烷的反应精馏过程。运用反应精馏法可解决三氯硅烷在歧化反应中转化率低以及杂质含量高的问题。通过调节进料位置、精馏比、回流比、停留时间来供来确定最佳的操作条件。模拟结果表明,在进料位置为第21块塔板、精馏比为0.2、回流比为49.43和停留时间为20 s的条件下,硅烷纯度可达到5N,杂质含量降低到10-18,可直接用于太阳能级多晶硅的生产;或对硅烷进行纯化使其纯度达到9N后,再进行热分解生产电子级多晶硅。The article simulates the reaction distillation process for producing high-purity monosilane from trichlorosilane-containing impurities through a disproportionation reaction.Using reaction distillation method can solve the problems of low conversion rate and high impurity content in the disproportionation reaction of trichlorosilane.The optimal operating conditions are determined by adjusting the feed position,distillation ratio,reflux ratio,and residence time.The simulation results show that under the conditions of a feed position of the 21st plate,a distillation ratio of 0.2,a reflux ratio of 49.43,and a residence time of 20 s,the purity of silane can reach 5N,and the impurity content is reduced to 10-18,which can be directly used for the production of solar-grade polysilicon;or the purity of silane can reach 9N after purification,and then undergo thermal decomposition to produce electronic-grade polysilicon.

关 键 词：精馏塔 硅烷 反应动力学 平衡级模型 太阳能级多晶硅 

分 类 号：TQ028.3[化学工程]