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作 者:Hao Wu Li Yang Gaojie Zhang Wen Jin Jie Yu Bichen Xiao Ahmed Annas Wenfeng Zhang Haixin Chang 武浩;杨丽;张高节;靳雯;虞杰;肖碧晨;王绍凌;张文峰;常海欣(Center for Joining and Electronic Packaging,State Key Laboratory of Material Processing and Die&Mold Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Shenzhen R&D Center of Huazhong University of Science and Technology,Shenzhen 518000,China)
机构地区:[1]Center for Joining and Electronic Packaging,State Key Laboratory of Material Processing and Die&Mold Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [2]Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [3]Shenzhen R&D Center of Huazhong University of Science and Technology,Shenzhen 518000,China
出 处:《Chinese Physics Letters》2025年第2期239-248,共10页中国物理快报(英文版)
基 金:supported by the National Key Research and Development Program of China(Grant No.2022YFE0134600);the Interdisciplinary Research Program of Huazhong University of Science and Technology(Grant No.2023JCYJ007);the China Postdoctoral Science Foundation(Grant No.2022M711234);the National Natural Science Foundation of China(Grant Nos.52272152,61674063,and 62074061);the Natural Science Foundation of Hubei Province,China(Grant No.2022CFA031);the Foundation of Shenzhen Science and Technology Innovation Committee(Grant Nos.JCYJ20180504170444967,JCYJ20210324142010030,and JCYJ20230807143614031)。
摘 要:The manipulation of magnetization and spin polarization using electrical currents represents a fundamental breakthrough in spintronics.It has formed the foundation for data storage and next-generation computing systems.Spin-transfer torque(STT)and spin-orbit torque(SOT)have emerged as prominent mechanisms in current-driven magnetization switching.However,these approaches typically require critical current densities in the range of 10^(6) to 10^(9) A·cm^(-2),resulting in significant heat generation during data writing processes.Herein,we report the discovery of an ultralow-vertical-current magnetization switching effect in a van der Waals ferromagnetic/ferroelectric heterostructure based on the modulation of the critical magnetic field(H_(C))using small vertical currents,with a critical current density as low as 1.81A·cm^(-2) and an average effective field(H_(eff)/J_(C))as high as 150.3mT·A^(-1)·cm^(2).This unique magnetization switching effect with ultralow-critical-vertical-current densities typically six to nine orders of magnitude lower than those of the STT and SOT provides a new transformative and viable pathway for developing next-generation spintronic and quantum technologies.
关 键 词:MAGNETIZATION critical typically
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