碳化硅减薄后的清洗工艺研究  

Research on Cleaning Technology of Silicon Carbide after Grinding

作　　者：孙莉莉 袁晓春 李远航 SUN Lili;YUAN Xiaochun;LI Yuanhang(The 45^(th)Research Institute of CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2025年第1期33-36,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了碳化硅减薄后清洗的工艺过程和原理,主要研究了碳化硅清洗过程中清洗方法、清洗时间、清洗气压对清洗效果的影响。提出改善清洗效果的工艺措施,为提高碳化硅加工过程中的清洗效率提供指导。The process and principle of silicon carbide cleaning after grinding are introduced in this paper,and mainly studies the influence of cleaning method,cleaning time and cleaning air pressure on the cleaning effect.The technological measures to improve the cleaning effect are put forward to provide guidance for improving the cleaning efficiency in the process of silicon carbide processing.

关 键 词：碳化硅减薄 清洗 工艺研究 

分 类 号：TN305.97[电子电信—物理电子学]