机构地区:[1]School of Chemistry and Chemical Engineering,Qilu University of Technology(Shandong Academy of Sciences),Jinan 250353,China [2]School of Mechanical,Electrical&Information Engineering,Shandong University,Weihai 264209,China [3]Key Laboratory of Engineering Dielectrics and Its Application(Ministry of Education),Harbin University of Science and Technology,Harbin 150080,China [4]School of Mechanical Engineering,Qilu University of Technology(Shandong Academy of Sciences),Jinan 250353,China [5]State Key Laboratory of Metal Matrix Composites,School of Material Sciences and Engineering,Shanghai Jiao Tong University,Shanghai 200240,China [6]Department of Mechanical Engineering,Kobe University,Kobe 657-8501,Japan [7]Key Laboratory of Key Film Materials&Application for Equipments(Hunan Province),Hunan Provincial Key Laboratory of Thin Film Materials and Devices,School of Material Sciences and Engineering,Xiangtan University,Xiangtan 411105,China
出 处:《Journal of Advanced Ceramics》2024年第12期1943-1954,共12页先进陶瓷(英文)
基 金:funding support from the National Natural Science Foundation of China(Nos.52002192,51772175,and 52402149);the Natural Science Foundation of Shandong Province(Nos.ZR2020QE042,ZR2022ZD39,ZR2022QB138,and ZR2022ME031);Hanfei Zhu and Qingguo Chi are grateful for the support from the Key Laboratory of Engineering Dielectrics and Its Application(Harbin University of Science and Technology),Ministry of Education(No.KFM202404);Jun Ouyang and Isaku Kanno acknowledge the financial support from the“Double Hundred Talent Plan”(No.WSG2021031)from Shandong Province,China;Jun Ouyang is also grateful for the funding support from the Jinan City Science and Technology Bureau(No.2021GXRC055);the Education Department of Hunan Province/Xiangtan University(No.KZ0807969);the Top Talents of Qilu University of Technology(Shandong Academy of Sciences).
摘 要:In this work,thick BiFeO_(3)films(~1μm)were prepared on LaNiO_(3)-buffered(111)Pt/Ti/SiO_(2)/(100)Si substrates via radio-frequency magnetron sputtering without post-growth annealing.The effects of the substrate temperature on the film’s crystallinity,defect chemistry,and associated electrical properties were investigated.In contrast to the poorly crystallized BiFeO_(3)film deposited at 300℃and the randomly-oriented and(111)-textured films deposited at 500 and 650℃,respectively,a(001)-preferred orientation was achieved in the BiFeO_(3)film deposited at 350℃.This film not only showed a dense,fine-grained morphology but also displayed enhanced electrical properties due to the(001)texture and improved defect chemistry.These properties include a reduced leakage current(J≈2.4×10^(−5)A/cm^(2)@200 kV/cm),a small dielectric constant(ε_(r)≈243–217)with a low loss(tanδ≤0.086)measured from 100 Hz to 1 MHz,and a nearly intrinsic remnant polarization(Pr)of~60μC/cm^(2).A detailed TEM analysis confirmed the R3c symmetry of the BFO films and hence ensured good stability of their electrical properties.In particular,single-beam cantilevers fabricated from BiFeO_(3)/LaNiO_(3)/Pt/Ti/SiO_(2)/Si heterostructures showed excellent electromechanical performance,including a large transverse piezoelectric coefficient(e_(31,f))of~−2.8 C/m^(2),a high figure of merit(FOM)parameter of~4.0 GPa,and a large signal-to-noise ratio of~1.5 C/m^(2).An in-depth analysis revealed the intrinsic nature of the e_(31,f)piezoelectric coefficient,which is well fitted along a straight line of e_(31,f)ratio=(ε_(r)P_(r))ratio with the reported representative results.These high-quality lead-free piezoelectric films processed with a reduced thermal budget can open many possibilities for the integration of piezoelectricity into Si-based microelectro–mechanical systems(MEMSs).
关 键 词:BiFeO_(3)film FERROELECTRIC piezoelectric micro-electro-mechanical system(piezo-MEMS) low thermal budget crystallographic orientation magnetron sputtering
分 类 号:TB3[一般工业技术—材料科学与工程]
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