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作 者:刘仁臣 王永伟[2] LIU Renchen;WANG Yongwei(School of General Education,AnHui Institute of Information Technology,242200,Wuhu,Anhui,China;Academic Affairs Office of Jiading High School Affiliated To Shanghai Jiaotong University,201821,Jiading,Shanghai,China)
机构地区:[1]安徽信息工程学院通识教育学院,安徽芜湖242200 [2]上海交通大学附属中学嘉定分校教务处,上海嘉定201821
出 处:《淮北师范大学学报(自然科学版)》2025年第1期26-31,共6页Journal of Huaibei Normal University:Natural Sciences
基 金:安徽省高校自然科学研究重点项目(KJ2021A1200)。
摘 要:探讨超薄聚酰亚胺(PI)/锆(Zr)自支撑滤光膜的制备和性能。以稀盐酸为腐蚀剂,对涂于氧化锌衬底上的聚酰胺酸薄膜进行剥离,经热亚胺化转化为聚酰亚胺薄膜,脱膜后得到厚度为600 nm自支撑PI薄膜。再在该自支撑PI薄膜上沉积一层200 nm的锆膜。为降低PI薄膜对Zr透过率的影响,采用准分子激光刻蚀减薄。结果显示,能量密度为40 m J/cm~2激光刻蚀160个脉冲和70 m J/cm~2刻蚀26个脉冲,均可得到200 nm PI/200 nm Zr自支撑复合薄膜。原子力显微镜测试显示两者均方根粗糙度分别为21.6 nm和33.4 nm。经同步辐射计量线站测定,2个样品在软X射线13.9 nm波段透过率分别为16.7%和14.8%。提示低能量密度刻蚀多个脉冲比较高能量密度刻蚀少脉冲数效果更好。制备的200 nm PI/200 nm Zr滤光膜有望满足激光诊断等离子体电子密度的实验需求。In order to discuss preparation and properties of ultra-thin Polyimide(PI)/Zirconium(Zr)freestanding filter films.Polyamic acid thin film was released from a Zn O coated substrate in diluted hydrochloride acid,then transformed into polyimide thin film with thermal imidization.A free-standing PI film with a thickness of 600 nm was obtained by demoulding.Then a 200 nm Zr film was deposited on the free-standing PI film.In order to reduce the influence of PI film on Zr transmittance,the thickness of the PI thin film was reduced using excimer laser ablation.Results showed that a 200 nm PI/200 nm Zr freestanding composite films was obtained both by laser ablation with an energy density of 40 m J/cm~2for 160pulses and 70 m J/cm~2for 26 pulses.Atomic force microscopy results indicated that the root mean square roughness of the two samples was 21.6 nm and 33.4 nm,respectively.According to the synchrotron radiation measurement line station,the transmittance of the two samples in the soft X-ray 13.9 nm band was 16.7%and 14.8%,respectively.These results revealed that comparative to higher energy density etching with fewer pulses,the low energy density etching with multiple pulses yielded better filter films.The prepared 200 nm PI/200 nm Zr filter film was expected to meet the experimental requirements for laser diagnosis of plasma electron density.
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