用于SiC MOSFET短路保护的平面型差分罗氏线圈建模与设计方法  

Modeling and Designing Method for Planar Differential Rogowski Coil for SiC MOSFET Short-circuit Protection

作　　者：李腾 辛振 石亚飞 薛聚 LI Teng;XIN Zhen;SHI Yafei;XUE Ju(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学省部共建电工装备可靠性与智能化国家重点实验室,天津300130

出　　处：《电源学报》2025年第1期219-228,共10页Journal of Power Supply

基　　金：国家自然科学基金青年基金资助项目(51907048)。

摘　　要：随着宽禁带器件的发展,SiCMOSFET得到广泛应用,对其短路保护的研究成为保障电力电子设备可靠性的重要课题。针对SiC MOSFET短路耐受时间短、短路故障难保护的问题,提出1种基于平面型差分罗氏线圈的SiC MOSFET短路检测方法。该方法通过测量电路的漏源极电流实现对短路故障的快速识别,具有响应速度快、抗干扰能力强、与主电路完全隔离等优点。首先介绍基于平面型罗氏线圈的SiC MOSFET短路检测方法的工作过程,着重研究平面型罗氏线圈的部分元等效电路PEEC(partial element equivalent circuit)建模方法,得到能反映线圈高频特性的等效模型。同时分析平面型罗氏线圈几何结构对线圈性能的影响,提出兼顾高增益及高带宽的优化设计方案,并针对罗氏线圈在强电磁干扰环境中测量准确度较低的问题,提出使用差分线圈方案提高抗扰性能。最后通过实验验证了所设计平面型差分罗氏线圈的抗干扰性能及基于该线圈的短路保护方法的可靠性。With the development of wide band gap devices,SiC MOSFET has been widely applied,and the research on its short-circuit protection has become an important topic to ensure the reliability of power electronic equipment.In view of the short short-circuit withstand time of SiC MOSFET and the difficulty in short-circuit fault protection,a short-circuit detection method for SiC MOSFET based on a planar differential Rogowski coil is proposed,which realizes a rapid identification of short-circuit fault by measuring the drain source current of the circuit and has advantages such as a fast response speed,a strong anti-interference capability and complete isolation from the main circuit.First,the working process of the SiC MOSFET short-circuit detection method based on the planar Rogowski coil is introduced.The partial element equivalent circuit(PEEC)modeling method for planar Rogowski coil is studied in detail,and an equivalent model which can reflect the coil’s high-frequency characteristics is obtained.At the same time,the influence of the geometric structure of the planar Rogowski coil on its performance is analyzed,and an optimal design scheme considering both the high gain and high bandwidth is proposed.Aimed at the problem of low measurement accuracy of the Rogowski coil in an environ-ment with strong electromagnetic interference,a scheme of using the differential coil is put forward to improve the anti-interference performance.Finally,the anti-interference per-formance of the designed planar differential Rogowski coil and the reliability of short-circuit protection method based on this coil were verified by experimental results.

关 键 词：SiC MOSFET 短路保护 平面型罗氏线圈 部分元等效电路建模 线圈设计 

分 类 号：TM93[电气工程—电力电子与电力传动]