A review of GaN RF devices and power amplifiers for 5G communication applications  

作　　者：Hao Lu Meng Zhang Ling Yang Bin Hou Rafael Perez Martinez Minhan Mi Jiale Du Longge Deng Mei Wu Srabanti Chowdhury Xiaohua Ma Yue Hao 

机构地区：[1]School of Microelectronics,Xidian University,Xi'an 710071,China [2]Department of Electrical Engineering,Stanford University,Stanford,CA 94305,USA

出　　处：《Fundamental Research》2025年第1期315-331,共17页自然科学基础研究(英文版)

基　　金：supported by the National Natural Science Foundation of China(62234009,62090014,62404165,and 62474135);the Natural Science Basic Research Program of Shaanxi(2024JC-YBQN-0611);the Stanford Graduate Fellowship(SGF);the China Postdoctoral Science Foundation(2023M732730);Postdoctoral Fellowship Program of CPSF(GZB20230557);the Fundamental Research Funds for the Central Universities of China(XJSJ23056,XJSJ23047,andZDRC2002).

摘　　要：In the emerging 5G and beyond 5G(B5G)era,the spotlight is sharply focused on the power amplifier,a critical component with stringent specification requirements that dictates the performance of the transmitter.The gallium nitride(GaN)device,with its superior inherent properties,is surfacing as a front-runner for power amplifier applications.The increasing demand for high frequency,high linearity,and cost-effective GaN power amplifiers is driven by anticipated traffic surges and the need for extensive 5G deployment.This paper offers a thorough review and future perspective on research developments in RF GaN device technology.It encompasses critical issues in advanced device and circuit technology,with a focus on high frequency,high linearity,cost-effective GaN-on-Si high electron mobility transistors(HEMTs),and compact modeling.This work aims to serve as a guide for the utilization of GaN HEMTs in 5G communication applications.

关 键 词：5G Gallium nitride High frequency High linearity GaN-on-Si HEMTs 

分 类 号：TN3[电子电信—物理电子学]