Silicon-based tribovoltaic nanogenerators:Surface chemistry isotope effect on device performance and durability  

作　　者：Xin Lyu Melanie Macgregor Nadim Darwish Simone Ciampi 

机构地区：[1]School of Molecular and Life Sciences,Curtin University,Bentley 6102,Australia [2]Flinders Institute for Nanoscale Science and Technology,Flinders University,Bedford Park 5042,Australia

出　　处：《Friction》2025年第2期99-110,共12页摩擦(英文版)

基　　金：Simone Ciampi and Melanie Macgregor acknowledge support from the Australian Research Council(Grant Nos.DP220100553,FT190100148,and FT200100301);the instruments and expertise of Microscopy Australia at the Future Industries Institute,University of South Australia,enabled by NCRIS,university,and state government support.

摘　　要：Triboelectric nanogenerators(TENGs)are advanced devices designed to harness mechanical energy from various sources such as vibrations,friction,or shear and convert it into electrical energy.Schottkybased tribovoltaic nanogenerators(TVNGs)are a type of TENG that incorporates a semiconductor-metal barrier,known as a Schottky barrier,into their design.This barrier aids in rectifying the generated electrical output,eliminating the need for external current rectification circuits.Further,silicon-based Schottky TVNGs can leverage existing surface functionalization procedures to improve device output and durability.Almost without exception,these procedures commence with an oxide-free and hydrogen-terminated silicon surface(Si-H).Replacing hydrogen with its heavier isotope deuterium(Si-D)does not hinder access to established surface chemistry procedures,and based on previous reports the isotope exchange is likely to improve resistance of the non-oxide semiconductor against its anodic decomposition.In this report we have developed the optimal surface chemistry procedures for preparing Si-D surfaces and explored to what extent this isotope effect translates into improved performances and durability of Schottky TVNGs.Our findings reveal that the maximum current output of TVNGs constructed on Si-D Si(111)crystals is comparable to that of mainstream Si-H devices.Additionally,we highlight a generally higher density of surface electrical defects in Si-D compared to Si-H,and verify the contribution of a flexoelectric term to the mechanic-to-electrical energy conversion mechanism.Ultimately,our experiments demonstrate that the primary advantage of replacing hydrogen with deuterium lies in enhancing device longevity.

关 键 词：triboelectric nanogenerators(TENGs) Schottky diodes silicon surface chemistry organic monolayers isotope effects FLEXOELECTRICITY 

分 类 号：TH117[机械工程—机械设计及理论]