Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance  

作　　者：Yu-Bin Shin Su Been Ham Ha-Neul Kim Mi-Ju Kim Jae-Woong Ko Jae-Wook Lee Young-Jo Park Jung-Hyung Kim Hyo-Chang Lee Young Hwa Jung Jung Woo Lee Ho Jin Ma 

机构地区：[1]Nano Materials Research Division,Korea Institute of Materials Science,Changwon 51508,Republic of Korea [2]Department of Materials Science and Engineering,Pusan National University,Pusan 46241,Republic of Korea [3]Semiconductor Integrated Metrology Team,Korea Research Institute of Standards and Science,Daejeon 34113,Republic of Korea [4]Department of semiconductor Science,Engineering and Technology,Korea Aerospace University,Goyang 10540,Republic of Korea [5]School of Electronics and Information Engineering,Korea Aerospace University,Goyang 10540,Republic of Korea [6]PLS-II Beamline Division,Pohang Accelerator Laboratory,Pohang 37673,Republic of Korea

出　　处：《Journal of Advanced Ceramics》2025年第1期163-176,共14页先进陶瓷(英文)

基　　金：supported by the Fundamental Research Program (PKC2140)of the Korea Institute of Materials Science(KIMS)。

摘　　要：High-entropy ceramics exhibit novel intrinsic properties.Hence,they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components.Recently,the semiconductor industry has faced a demand for higher-performance chips,necessitating higher aspect ratios in wafer fabrication and further miniaturization of linewidths.Therefore,novel materials with high plasma etching resistance and minimal contaminant generation are needed.The plasma-etching resistance displayed by high-entropy ceramics can be an innovative solution to this emerging challenge.In this study,we successfully fabricated single-phase high-entropy sesquioxide ceramics with high optical transparency,dense microstructure,and minimal residual pores.A structural analysis of the fabricated samples revealed a single-phase structure with excellent phase homogeneity.An evaluation of the plasma-etching resistance of high-entropy ceramics revealed for the first time a low etching rate of 8 nm/h compared with that of conventional plasma-resistant materials.These comprehensive characterizations of high-entropy ceramics indicate that they are promising candidates for significantly improving the production yield of semiconductors and for a wide range of potential applications,such as next-generation active optical ceramics.

关 键 词：high-entropy ceramics plasma etching resistance transparent ceramics sintering semiconductor manufacturing 

分 类 号：TQ174.7[化学工程—陶瓷工业]