碳纳米管射频晶体管及放大器电路研究  

Research on Carbon Nanotube RF Transistors and Amplifier Circuits

作　　者：赵亮[1] 杨扬 霍帅[1,2] 张勇 陆辉[1] 汪珍胜 钟世昌 唐世军[1] 孔月婵[1] 陈堂胜[1] ZHAO Liang;YANG Yang;HUO Shuai;ZHANG Yong;LU Hui;WANG Zhensheng;ZHONG Shichang;TANG Shijun;KONG Yuechan;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;CETC Key Laboratory of Carbon-based Electronics,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]中国电科碳基电子重点实验室,南京210016

出　　处：《固体电子学研究与进展》2025年第1期22-27,共6页Research & Progress of SSE

摘　　要：基于射频电子器件级碳纳米管阵列材料,研制出具备高增益、高线性特性的射频场效应晶体管,并对其进行了S参数提取、等效电路建模及匹配电路设计,实现了单级碳纳米管射频放大器电路。该电路在9 GHz点频增益达10.9 dB,增益1 dB压缩点处三阶交调优于-35 dBc。本文首次报道了X波段碳纳米管射频放大器电路,可为碳纳米管射频电子技术的发展提供技术参考。Based on radio frequency device-level carbon nanotube array materials,carbon nano-tube radio frequency field effect transistors(CNT RF FETs)with high gain and high linearity perfor-mances are developed in this paper.And by S-parameter extraction,equivalent circuit modeling and matching circuit design,a single-stage carbon nanotube RF amplifier circuit is realized.The amplifier shows a gain of 10.9 dB at 9 GHz and third-order intermodulation better than-35 dBc at the 1 dB gain compression point.This paper for the first time reports an X-band carbon nanotube RF amplifier circuit,and can provide technical reference for the further development of carbon nanotube RF elec-tronics.

关 键 词：碳纳米管 射频 放大器 

分 类 号：TQ127.11[化学工程—无机化工] TN325[电子电信—物理电子学] TN454