具有低漏电和优异亚阈值特性的p-GaN/GaN/AlGaN增强型p型MOSHFET  

p-GaN/GaN/AIGaN Enhancement-Mode p-Type MOSHFET with Low Leakage Current and Superior Subthreshold Characteristics

作　　者：范继锋 王永强 张艺 李巍 雷鹏 Fan Jifeng;Wang Yongqiang;Zhang Yi;Li Wei;Lei Peng(Inner Mongolia Power Co.Wuhai UHV Power Supply Branch Company,Wuhai 016000,China)

机构地区：[1]内蒙古电力(集团)有限责任公司乌海超高压供电分公司,内蒙古乌海016000

出　　处：《半导体技术》2025年第3期241-247,共7页Semiconductor Technology

基　　金：国家电网内蒙古分公司科技项目(2024-4-38)。

摘　　要：为了实现GaN基互补逻辑电路,基于GaN的p型半导体器件逐渐引起广泛关注。制备了基于p-GaN/GaN/Al_(0.29)Ga_(0.71)N异质结构的p型金属氧化物异质结场效应晶体管(MOSHFET),该异质结构通过金属有机化学气相沉积(MOCVD)技术生长在蓝宝石基底上。在p-GaN/GaN/Al_(0.29)Ga_(0.71)N异质结构中,二维空穴气(2DHG)面密度为1.3×10_(13)cm^(-2),且在温度降至80 K时保持不变。通过干法刻蚀减小GaN沟道厚度,使p型MOSHFET呈现增强型工作模式,并获得负的阈值电压(V_(th))。室温下,基于GaN(18 nm)/Al_(0.29)Ga_(0.71)N的增强型p型MOSHFET的V_(th)为-0.79 V,导通电流|I_(ON)|为2.41 mA/mm,关断态漏电流|I_(OFF)|为2.66 pA/mm,亚阈值摆幅(SS)为116 mV/dec。这种极低的|I_(OFF)|和SS值表明材料具有较高的外延质量。此外,在200℃下,该p型MOSHFET仍保持低于10 pA/mm的|I_(OFF)|,且V_(th)偏移较小(-0.3 V),展现出优异的高温工作能力。To achieve GaN-based complementary logic circuits,GaN-based p-type semiconductor devices have attracted wide attention.The p-type metal-oxide heterojunction field-effect transistors(MOSHFETs)based on p-GaN/GaN/Al_(0.29)Ga_(0.71)N heterostructures grown by metal-organic chemical vapor deposition(MOCVD)on sapphire substrates were prepared.The two-dimensional hole gas(2DHG)surface density in the p-GaN/GaN/Al_(0.29)Ga_(0.71)N heterostructures is 1.3×10_(13)cm^(-2) and remains unchanged down to a temperature of 80 K.A reduction of the GaN channel thickness by dry etching renders the p-type MOSHFET enhancement-mode(E-mode)withanegativethresholdvoltage(Vh).The E-mode p-type MOSHFET realized by GaN(18 nm)/Al_(0.24) Ga_(0.76) N shows a Vit of-0.79 V,an on-current |I_(ON)| of 2.41 mA/mm,an off-state drain current(|I_(OFF)|)of2.66pA/mmand a subthreshold swing(SS)of 116 mV/dec.Such ultralow |I_(OFF)| and SS value indicate high epitaxial quality of the material.In addition,at 200℃,thep-typeMOSHFET maintainsan|I_(OFF)| below10pA/mm and exhibits a small Vin shift(-0.3 V),demonstrating excellent high-temperature performance.

关 键 词：GaN 金属氧化物异质结场效应晶体管(MOSHFET) 二维空穴气(2DHG) 高温 增强型 亚阈值摆幅(SS) 关断态漏电流 阈值电压 

分 类 号：TN386[电子电信—物理电子学]