基于MoS_(2)/MoO_(2)异质结构的高性能NO_(2)室温气体传感器  

High Performance NO_(2),Room Temperature Gas Sensor Based on MoS_(2)/MoO_(2) Heterostructure

作　　者：陈雷庆 罗雅孜 Chen Leiqing;Luo Yazi(School of Mechanical and Electronic Engineering,East China University of Technology,Nanchang 330013,China)

机构地区：[1]东华理工大学机械与电子工程学院,南昌330013

出　　处：《半导体技术》2025年第3期254-258,312,共6页Semiconductor Technology

基　　金：江西省教育厅科学技术研究项目(GJJ180410)。

摘　　要：金属氧化物半导体(MOS)气体传感器因工作温度过高,在室温检测方面受到阻碍。近年来,过渡金属二硫化物(TMD)因独特的物理和化学性质在室温检测领域受到广泛关注。MoS_(2)作为TMD中的一种,因高比表面积、高电子迁移率等优点而被广泛研究,但本征MoS_(2)气体传感器响应较低。利用简单的溶剂热法及后续在不同氩气和氧气混合气氛中高温退火处理合成了MoS_(2)/MoO_(2)异质结构,并制备传感器进行性能测试。结果表明,持续通入10 cm3/min氩气的传感器(M-10)对体积分数50×10^(-6)NO_(2)的响应从纯MoS_(2)传感器的1.72提升至19.69。与已有的MoS_(2)基气体传感器相比,该合成方法具有工艺简单、成本较低、可进行室温检测和灵敏度高的优势,为室温下检测NO_(2)提供了参考。Metal oxide semiconductor(MOS)gas sensors are hampered in room temperature detection because of their high operating temperature.In recent years,transition metal disulfides(TMDs)have attracted much attention in the field of room temperature detection due to their unique physical and chemical properties.As a kind of TMDs,MoS_(2)has been widely studied for its advantages of high specific surface area and high electron mobility,but the intrinsic MoS_(2)gas sensor has a low response.The MoS_(2)/MoO_(2)heterostructures were synthesized by a simple solvothermal method with subsequent high temperature annealing in different argon and oxygen atmospheres,and the sensors were prepared for performance testing.The results show that the response of the sensor with 10 cm/min argon(M-10)to NO,with a volume fraction of 50x10^(-6)increases from 1.72 for the pristine MoS_(2)sensor to 19.69.Compared with the existing MoS_(2)-based gas sensors,this synthesized method has the advantages of simple process,lower cost,room temperature detection ability and high sensitivity,which provides reference for the detection of NO,at room temperature.

关 键 词：气体传感器 MoS_(2)/MoO_(2)异质结构 室温 气体响应 NO_(2) 

分 类 号：TN304.2[电子电信—物理电子学]